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000201610 1001_ $$0P:(DE-HGF)0$$aCooper, D.$$b0
000201610 245__ $$aInterpretation of phase images of delta-doped layers
000201610 260__ $$aTokyo$$bOxford Univ. Press$$c2013
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000201610 520__ $$aAn approach is presented that allows independent determination of the mean inner potential contribution to a phase image of a highly doped layer in a semiconductor measured using off-axis electron holography, in order to quantify the contribution to the recorded phase from the dopant potential alone. The method takes into account the possible presence of both substitutional and interstitial dopant atoms and is used here to analyse an experimental phase image of 12 delta-doped B layers in Si that are separated from each other by <6 nm. 
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000201610 7001_ $$0P:(DE-Juel1)144121$$aDunin-Borkowski, Rafal$$b1$$eCorresponding Author$$ufzj
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