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@ARTICLE{Cooper:201610,
      author       = {Cooper, D. and Dunin-Borkowski, Rafal},
      title        = {{I}nterpretation of phase images of delta-doped layers},
      journal      = {Microscopy},
      volume       = {62},
      number       = {suppl 1},
      issn         = {2050-5701},
      address      = {Tokyo},
      publisher    = {Oxford Univ. Press},
      reportid     = {FZJ-2015-03904},
      pages        = {S87 - S98},
      year         = {2013},
      abstract     = {An approach is presented that allows independent
                      determination of the mean inner potential contribution to a
                      phase image of a highly doped layer in a semiconductor
                      measured using off-axis electron holography, in order to
                      quantify the contribution to the recorded phase from the
                      dopant potential alone. The method takes into account the
                      possible presence of both substitutional and interstitial
                      dopant atoms and is used here to analyse an experimental
                      phase image of 12 delta-doped B layers in Si that are
                      separated from each other by <6 nm.},
      cin          = {PGI-5},
      ddc          = {570},
      cid          = {I:(DE-Juel1)PGI-5-20110106},
      pnm          = {42G - Peter Grünberg-Centre (PG-C) (POF2-42G41)},
      pid          = {G:(DE-HGF)POF2-42G41},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000319470800009},
      doi          = {10.1093/jmicro/dft014},
      url          = {https://juser.fz-juelich.de/record/201610},
}