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@ARTICLE{Enyashin:201613,
author = {Enyashin, Andrey N. and Bar-Sadan, Maya and Houben, Lothar
and Seifert, Gotthard},
title = {{L}ine {D}efects in {M}olybdenum {D}isulfide {L}ayers},
journal = {The journal of physical chemistry / C},
volume = {117},
number = {20},
issn = {1932-7455},
address = {Washington, DC},
publisher = {Soc.},
reportid = {FZJ-2015-03907},
pages = {10842 - 10848},
year = {2013},
abstract = {Layered molecular materials and especially MoS2 are already
accepted as promising candidates for nanoelectronics. In
contrast to the bulk material, the observed electron
mobility in single-layer MoS2 is unexpectedly low. Here we
reveal the occurrence of intrinsic defects in MoS2 layers,
known as inversion domains, where the layer changes its
direction through a line defect. The line defects are
observed experimentally by atomic resolution TEM. The
structures were modeled and the stability and electronic
properties of the defects were calculated using
quantum-mechanical calculations based on the
Density-Functional Tight-Binding method. The results of
these calculations indicate the occurrence of new states
within the band gap of the semiconducting MoS2. The most
stable nonstoichiometric defect structures are observed
experimentally, one of which contains metallic Mo–Mo bonds
and another one bridging S atoms.},
cin = {PGI-5},
ddc = {540},
cid = {I:(DE-Juel1)PGI-5-20110106},
pnm = {42G - Peter Grünberg-Centre (PG-C) (POF2-42G41)},
pid = {G:(DE-HGF)POF2-42G41},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000319649400071},
doi = {10.1021/jp403976d},
url = {https://juser.fz-juelich.de/record/201613},
}