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024 7 _ |a 10.1063/1.4791576
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024 7 _ |a 0003-6951
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024 7 _ |a 1931-9401
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082 _ _ |a 530
100 1 _ |a Kohn, Amit
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245 _ _ |a Structure of epitaxial L10-FePt/MgO perpendicular magnetic tunnel junctions
260 _ _ |a Melville, NY
|c 2013
|b American Inst. of Physics
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520 _ _ |a Perpendicular magnetic tunnel junctions (p-MTJs) with MgO barriers are interesting for high-density information-storage devices. Chemically ordered L10-FePt is a potential electrode due to its large perpendicular magnetocrystalline anisotropy. To-date, a single theoretical study on L10-FePt/MgO p-MTJ based on an idealized structure reported significant dependence of spin-dependent tunneling on interface structure. [Y. Taniguchi et al., IEEE Trans. Magn. 44, 2585 (2008).] We report a structural study of epitaxial L10-FePt(001)[110]//MgO(001)[110]//L10-FePt(001)[110] p-MTJs, focusing on the interfaces using aberration-corrected scanning transmission electron microscopy. Interfaces are semi-coherent, with oxygen atomic-columns of MgO located opposite to iron atomic-columns in L10-FePt. Up to three lattice planes show atomic-column steps, the origin of which is attributed to antiphase boundaries in L10-FePt.
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700 1 _ |a Tal, Nadav
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700 1 _ |a Elkayam, Ayala
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700 1 _ |a Kovàcs, Andras
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700 1 _ |a Li, Dalai
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700 1 _ |a Wang, Shouguo
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700 1 _ |a Ghannadzadeh, Saman
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700 1 _ |a Hesjedal, Thorsten
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700 1 _ |a Ward, Roger C. C.
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773 _ _ |a 10.1063/1.4791576
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