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@ARTICLE{Raab:201845,
      author       = {Raab, N. and Bäumer, C. and Dittmann, R.},
      title        = {{I}mpact of the cation-stoichiometry on the resistive
                      switching and data retention of {S}r{T}i{O}$_{3}$ thin
                      films},
      journal      = {AIP Advances},
      volume       = {5},
      number       = {4},
      issn         = {2158-3226},
      address      = {New York, NY},
      publisher    = {American Inst. of Physics},
      reportid     = {FZJ-2015-04139},
      pages        = {047150 -},
      year         = {2015},
      abstract     = {Resistive switching oxides are investigated at great length
                      as promising candidates for the next generation of
                      non-volatile memories. It is generally assumed that defects
                      have a strong impact on the resistive switching properties
                      of transition metal oxides. However, the correlation between
                      different types of defect structures and the switching
                      properties is still elusive. We deposited single-crystalline
                      SrTiO3 thin films with various cation stoichiometry by
                      pulsed laser deposition to investigate the stoichiometry
                      related and therefore defect dependent influence on the
                      resistive switching properties. This letter will reveal the
                      differences in initial states, forming steps, switching
                      characteristics as well as retention times taking into
                      account both point defects and extended defects. We then
                      propose an explanation on the basis of oxygen vacancy
                      generation and redistribution to elucidate the dependence of
                      the resistive switching properties on the cation
                      stoichiometry dependent defect structure.},
      cin          = {PGI-7},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-7-20110106},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000353827700083},
      doi          = {10.1063/1.4919697},
      url          = {https://juser.fz-juelich.de/record/201845},
}