TY  - JOUR
AU  - Valov, Ilia
TI  - Redox-Based Resistive Switching Memories (ReRAMs): Electrochemical Systems at the Atomic Scale
JO  - ChemElectroChem
VL  - 1
IS  - 1
SN  - 2196-0216
CY  - Weinheim
PB  - Wiley-VCH
M1  - FZJ-2015-04180
SP  - 26 - 36
PY  - 2014
AB  - Resistive switching memories (RRAMs) are an emerging research field, which is currently of focused interest for both the interdisciplinary scientific community and industry. RRAMs are nano-electrochemical systems with great potential as a disruptive technology for the semiconductor industry as well as for a number of applications such as memory, logic and analog circuits, memristive operations, neuromorphic applications and computing. The present review aims to present the current state-of-the-art knowledge on redox-based resistive switching RRAMs, highlighting the role of the interfaces, discussing the electrochemical kinetics during formation of nanofilaments, and to relate them to the more fundamental issue of microscopic description of electrochemical processes at the atomic scale.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000338287600002
DO  - DOI:10.1002/celc.201300165
UR  - https://juser.fz-juelich.de/record/201890
ER  -