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@ARTICLE{Valov:201890,
author = {Valov, Ilia},
title = {{R}edox-{B}ased {R}esistive {S}witching {M}emories
({R}e{RAM}s): {E}lectrochemical {S}ystems at the {A}tomic
{S}cale},
journal = {ChemElectroChem},
volume = {1},
number = {1},
issn = {2196-0216},
address = {Weinheim},
publisher = {Wiley-VCH},
reportid = {FZJ-2015-04180},
pages = {26 - 36},
year = {2014},
abstract = {Resistive switching memories (RRAMs) are an emerging
research field, which is currently of focused interest for
both the interdisciplinary scientific community and
industry. RRAMs are nano-electrochemical systems with great
potential as a disruptive technology for the semiconductor
industry as well as for a number of applications such as
memory, logic and analog circuits, memristive operations,
neuromorphic applications and computing. The present review
aims to present the current state-of-the-art knowledge on
redox-based resistive switching RRAMs, highlighting the role
of the interfaces, discussing the electrochemical kinetics
during formation of nanofilaments, and to relate them to the
more fundamental issue of microscopic description of
electrochemical processes at the atomic scale.},
cin = {PGI-7},
ddc = {540},
cid = {I:(DE-Juel1)PGI-7-20110106},
pnm = {421 - Frontiers of charge based Electronics (POF2-421)},
pid = {G:(DE-HGF)POF2-421},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000338287600002},
doi = {10.1002/celc.201300165},
url = {https://juser.fz-juelich.de/record/201890},
}