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| Hauptseite > Publikationsdatenbank > Redox-Based Resistive Switching Memories (ReRAMs): Electrochemical Systems at the Atomic Scale > print |
| Hauptseite > Publikationsdatenbank > Redox-Based Resistive Switching Memories (ReRAMs): Electrochemical Systems at the Atomic Scale > print |
| 001 | 201890 | ||
| 005 | 20210129215938.0 | ||
| 024 | 7 | _ | |a 10.1002/celc.201300165 |2 doi |
| 024 | 7 | _ | |a WOS:000338287600002 |2 WOS |
| 024 | 7 | _ | |a altmetric:1996455 |2 altmetric |
| 037 | _ | _ | |a FZJ-2015-04180 |
| 082 | _ | _ | |a 540 |
| 100 | 1 | _ | |a Valov, Ilia |0 P:(DE-Juel1)131014 |b 0 |e Corresponding Author |
| 245 | _ | _ | |a Redox-Based Resistive Switching Memories (ReRAMs): Electrochemical Systems at the Atomic Scale |
| 260 | _ | _ | |a Weinheim |c 2014 |b Wiley-VCH |
| 336 | 7 | _ | |a Journal Article |b journal |m journal |0 PUB:(DE-HGF)16 |s 1435647730_3520 |2 PUB:(DE-HGF) |
| 336 | 7 | _ | |a Output Types/Journal article |2 DataCite |
| 336 | 7 | _ | |a Journal Article |0 0 |2 EndNote |
| 336 | 7 | _ | |a ARTICLE |2 BibTeX |
| 336 | 7 | _ | |a JOURNAL_ARTICLE |2 ORCID |
| 336 | 7 | _ | |a article |2 DRIVER |
| 520 | _ | _ | |a Resistive switching memories (RRAMs) are an emerging research field, which is currently of focused interest for both the interdisciplinary scientific community and industry. RRAMs are nano-electrochemical systems with great potential as a disruptive technology for the semiconductor industry as well as for a number of applications such as memory, logic and analog circuits, memristive operations, neuromorphic applications and computing. The present review aims to present the current state-of-the-art knowledge on redox-based resistive switching RRAMs, highlighting the role of the interfaces, discussing the electrochemical kinetics during formation of nanofilaments, and to relate them to the more fundamental issue of microscopic description of electrochemical processes at the atomic scale. |
| 536 | _ | _ | |a 421 - Frontiers of charge based Electronics (POF2-421) |0 G:(DE-HGF)POF2-421 |c POF2-421 |f POF II |x 0 |
| 588 | _ | _ | |a Dataset connected to CrossRef, juser.fz-juelich.de |
| 773 | _ | _ | |a 10.1002/celc.201300165 |g Vol. 1, no. 1, p. 26 - 36 |0 PERI:(DE-600)2724978-5 |n 1 |p 26 - 36 |t ChemElectroChem |v 1 |y 2014 |x 2196-0216 |
| 909 | C | O | |o oai:juser.fz-juelich.de:201890 |p VDB |
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| 913 | 2 | _ | |a DE-HGF |b Key Technologies |l Future Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT) |1 G:(DE-HGF)POF3-520 |0 G:(DE-HGF)POF3-521 |2 G:(DE-HGF)POF3-500 |v Controlling Electron Charge-Based Phenomena |x 0 |
| 913 | 1 | _ | |a DE-HGF |b Schlüsseltechnologien |1 G:(DE-HGF)POF2-420 |0 G:(DE-HGF)POF2-421 |2 G:(DE-HGF)POF2-400 |v Frontiers of charge based Electronics |x 0 |4 G:(DE-HGF)POF |3 G:(DE-HGF)POF2 |l Grundlagen zukünftiger Informationstechnologien |
| 914 | 1 | _ | |y 2015 |
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| 915 | _ | _ | |a DBCoverage |0 StatID:(DE-HGF)0199 |2 StatID |b Thomson Reuters Master Journal List |
| 915 | _ | _ | |a DBCoverage |0 StatID:(DE-HGF)1150 |2 StatID |b Current Contents - Physical, Chemical and Earth Sciences |
| 920 | 1 | _ | |0 I:(DE-Juel1)PGI-7-20110106 |k PGI-7 |l Elektronische Materialien |x 0 |
| 980 | _ | _ | |a journal |
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| 980 | _ | _ | |a UNRESTRICTED |
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