TY  - JOUR
AU  - Guo, Xin
TI  - Roles of Schottky barrier and oxygen vacancies in the electroforming of SrTiO$_{3}$
JO  - Applied physics reviews
VL  - 101
IS  - 15
SN  - 0003-6951
CY  - New York, NY
PB  - AIP74335
M1  - FZJ-2015-04184
SP  - 152903 -
PY  - 2012
AB  - Single crystalline SrTiO3 was used as a model system to evaluate the roles of the Schottky barrier and oxygen vacancies in electroforming. An advantage of single crystalline SrTiO3 is that the electrochemical processes at intermediate temperatures have been thoroughly investigated. To take this advantage, the electroforming was performed at 200 °C and subsequently at 24 °C; an electrical stress of 4 × 103 V/cm, which was about two orders of magnitude lower than the electrical stress in previous works, decreased the cell resistance by orders of magnitude. After the electroforming, bipolar resistive switching was realized at 24 °C.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000310304900055
DO  - DOI:10.1063/1.4759030
UR  - https://juser.fz-juelich.de/record/201894
ER  -