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@ARTICLE{Guo:201894,
author = {Guo, Xin},
title = {{R}oles of {S}chottky barrier and oxygen vacancies in the
electroforming of {S}r{T}i{O}$_{3}$},
journal = {Applied physics reviews},
volume = {101},
number = {15},
issn = {0003-6951},
address = {New York, NY},
publisher = {AIP74335},
reportid = {FZJ-2015-04184},
pages = {152903 -},
year = {2012},
abstract = {Single crystalline SrTiO3 was used as a model system to
evaluate the roles of the Schottky barrier and oxygen
vacancies in electroforming. An advantage of single
crystalline SrTiO3 is that the electrochemical processes at
intermediate temperatures have been thoroughly investigated.
To take this advantage, the electroforming was performed at
200 °C and subsequently at 24 °C; an electrical stress
of 4 × 103 V/cm, which was about two orders of
magnitude lower than the electrical stress in previous
works, decreased the cell resistance by orders of magnitude.
After the electroforming, bipolar resistive switching was
realized at 24 °C.},
cin = {PGI-7},
ddc = {530},
cid = {I:(DE-Juel1)PGI-7-20110106},
pnm = {424 - Exploratory materials and phenomena (POF2-424)},
pid = {G:(DE-HGF)POF2-424},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000310304900055},
doi = {10.1063/1.4759030},
url = {https://juser.fz-juelich.de/record/201894},
}