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@ARTICLE{Kubacki:201895,
author = {Kubacki, Jerzy and Molak, Andrzej and Rogala, Maciej and
Rodenbücher, Christian and Szot, Krzysztof},
title = {{M}etal–insulator transition induced by non-stoichiometry
of surface layer and molecular reactions on single crystal
{KT}a{O}$_{3}$},
journal = {Surface science},
volume = {606},
number = {15-16},
issn = {0039-6028},
address = {Amsterdam},
publisher = {Elsevier},
reportid = {FZJ-2015-04185},
pages = {1252 - 1262},
year = {2012},
abstract = {In the study we present results on topography, morphology,
chemical composition, electronic structure and electrical
properties of the (100) surface layer of KTaO3 single
crystal caused by sputtering with Ar+ ion beam with energy
of 1 keV. Several surface sensitive techniques, i.e. X-ray
photoelectron spectroscopy (XPS), local conductivity of
atomic force microscopy (LC-AFM), and Kelvin Probe Force
Microscopy (KPFM) were used. The observed changes in the
electronic structure were explained as a result of the
chemical decomposition of the surface layer. A correlation
between the electronic states which appeared in the energy
gap and the changes in charge state of Ta ions was found.
The activation energy related to averaged local conductivity
temperature dependence was estimated from Arrhenius plot. It
was also found, that variations in the local contact
potential difference (LCPD) indicated changes in the
chemical composition in nano-scale. The chemical
reconstruction of the KTaO3 surface modified by Ar+ ion beam
was deduced. This non-homogeneity corresponded to 2-D
non-homogeneity of the local electric conduction (LC-AFM),
which occurred within nano-areas after sputtering. Chemical
reactivity of the modified surface with CO2 and O2 was
observed. The reversibility of the Ar+ induced loss of
oxygen non-stoichiometry was observed after the sample was
exposed to various doses of O2. The successful reversibility
occurred after oxidation process at high temperature, i.e.
300 °C.},
cin = {PGI-7 / JARA-FIT},
ddc = {540},
cid = {I:(DE-Juel1)PGI-7-20110106 / $I:(DE-82)080009_20140620$},
pnm = {421 - Frontiers of charge based Electronics (POF2-421)},
pid = {G:(DE-HGF)POF2-421},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000305845600023},
doi = {10.1016/j.susc.2012.04.005},
url = {https://juser.fz-juelich.de/record/201895},
}