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@ARTICLE{JankowskaSumara:201897,
      author       = {Jankowska-Sumara, Irena and Szot, K. and Majchrowski,
                      Andrzej and Roleder, Krystian},
      title        = {{T}hermal hysteresis of local instabilities in paraelectric
                      phase of {P}b{Z}r$_{0.96}${S}n$_{0.04}$ {O}$_{3}$ single
                      crystals},
      journal      = {Journal of applied physics},
      volume       = {113},
      number       = {18},
      issn         = {0021-8979},
      address      = {Melville, NY},
      publisher    = {American Inst. of Physics},
      reportid     = {FZJ-2015-04187},
      pages        = {187209 -},
      year         = {2013},
      abstract     = {Investigations of local electromechanical properties for
                      PbZr1− x Sn x O3 single crystals are a way to understand
                      better the phase transition mechanisms in oxide perovskites
                      with antiferroelectric phase transition. The investigations
                      of local electromechanical studies were performed by the
                      PEFM. The piezoelectric activity in nano-scale and weak
                      birefringence observed in micro-scale have been found in the
                      paraelectric phase and are a proof for theoretically
                      predicted local instability above T C [A. Bussmann-Holder et
                      al., Phys. Rev. B 79, 184111 (2009)]. Origin of these
                      instabilities is analysed taking into account
                      non-homogeneous distribution of Sn in crystal lattice,
                      presence of extended defects and other lattice
                      inhomogeneities. Temperature dependences and thermal
                      hysteresis of piezo- and electrostrictive responses were
                      compared with bulk properties.},
      cin          = {PGI-7},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-7-20110106},
      pnm          = {421 - Frontiers of charge based Electronics (POF2-421)},
      pid          = {G:(DE-HGF)POF2-421},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000319294100115},
      doi          = {10.1063/1.4801980},
      url          = {https://juser.fz-juelich.de/record/201897},
}