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@ARTICLE{Valov:201899,
      author       = {Valov, Ilia and Kozicki, Michael N},
      title        = {{C}ation-based resistance change memory},
      journal      = {Journal of physics / D},
      volume       = {46},
      number       = {7},
      issn         = {1361-6463},
      address      = {Bristol},
      publisher    = {IOP Publ.},
      reportid     = {FZJ-2015-04189},
      pages        = {074005 -},
      year         = {2013},
      abstract     = {A potential replacement for current charge-based memory
                      technologies in the nanoscale device regime is a form of
                      resistance change memory (RRAM) which utilizes cation
                      transport and redox reactions to form and remove a
                      conducting filament in a
                      metal–electrolyte/insulator–metal (MEM/MIM) structure. A
                      variety of oxide and higher chalcogenide materials have been
                      used as the silver or copper ion transport medium, yielding
                      devices with similar switching characteristics. The
                      technology has been the subject of extensive research in
                      academia and industry and is in an advanced stage of
                      commercialization but there remain a number of fundamental
                      questions regarding the fine details of device operation and
                      the connection with electrochemical theory at the nanoscale.
                      This review surveys some of the published research in the
                      area and considers the topics of ion-conducting materials,
                      rate limiting steps during device operation and filament
                      stability. Device performance and modelling are also
                      presented and discussed.},
      cin          = {PGI-7},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-7-20110106},
      pnm          = {421 - Frontiers of charge based Electronics (POF2-421)},
      pid          = {G:(DE-HGF)POF2-421},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000314471900006},
      doi          = {10.1088/0022-3727/46/7/074005},
      url          = {https://juser.fz-juelich.de/record/201899},
}