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@ARTICLE{Valov:201900,
      author       = {Valov, I. and Staikov, G.},
      title        = {{N}ucleation and growth phenomena in nanosized
                      electrochemical systems for resistive switching memories},
      journal      = {Journal of solid state electrochemistry},
      volume       = {17},
      number       = {2},
      issn         = {1433-0768},
      address      = {Berlin},
      publisher    = {Springer},
      reportid     = {FZJ-2015-04190},
      pages        = {365 - 371},
      year         = {2013},
      abstract     = {The impact of the electrochemical nucleation on the
                      switching kinetics in many nanoscaled redox-based resistive
                      switching memories is critically discussed. In the case of
                      the atomic switch, the system is site invariant and the
                      nucleation process is strictly localized below the STM tip.
                      Using RbAg4I5 solid electrolyte, nucleation was found to be
                      rate limiting. The electrochemical metallization memory
                      cells (gapless type atomic switch) operate at conditions
                      closer to the conventional nucleation. They introduce
                      additional difficulties for interpretation of the
                      experimental results due to formation of hillocks, of
                      surface oxide barrier films, induction of strain, and the
                      influence of the high electric field. In valence change
                      memories, the nucleation seems to be less important because
                      of the higher applied voltages. The results are discussed in
                      the context of the atomistic theory of electrochemical
                      nucleation. We believe that re-analysis of the experimental
                      data for many systems will reveal that the nucleation is
                      limiting the switching time.},
      cin          = {PGI-7},
      ddc          = {540},
      cid          = {I:(DE-Juel1)PGI-7-20110106},
      pnm          = {421 - Frontiers of charge based Electronics (POF2-421)},
      pid          = {G:(DE-HGF)POF2-421},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000313800200011},
      doi          = {10.1007/s10008-012-1890-5},
      url          = {https://juser.fz-juelich.de/record/201900},
}