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100 1 _ |a Valov, I.
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245 _ _ |a Nucleation and growth phenomena in nanosized electrochemical systems for resistive switching memories
260 _ _ |a Berlin
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336 7 _ |a Journal Article
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520 _ _ |a The impact of the electrochemical nucleation on the switching kinetics in many nanoscaled redox-based resistive switching memories is critically discussed. In the case of the atomic switch, the system is site invariant and the nucleation process is strictly localized below the STM tip. Using RbAg4I5 solid electrolyte, nucleation was found to be rate limiting. The electrochemical metallization memory cells (gapless type atomic switch) operate at conditions closer to the conventional nucleation. They introduce additional difficulties for interpretation of the experimental results due to formation of hillocks, of surface oxide barrier films, induction of strain, and the influence of the high electric field. In valence change memories, the nucleation seems to be less important because of the higher applied voltages. The results are discussed in the context of the atomistic theory of electrochemical nucleation. We believe that re-analysis of the experimental data for many systems will reveal that the nucleation is limiting the switching time.
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700 1 _ |a Staikov, G.
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773 _ _ |a 10.1007/s10008-012-1890-5
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