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@ARTICLE{Nowak:201903,
      author       = {Nowak, A. and Persson, J. and Schmelzer, B. and Szade, J.
                      and Szot, K.},
      title        = {{L}ow temperature reduction in {T}a–{O} and {N}b–{O}
                      thin films},
      journal      = {Journal of physics / D},
      volume       = {47},
      number       = {13},
      issn         = {1361-6463},
      address      = {Bristol},
      publisher    = {IOP Publ.},
      reportid     = {FZJ-2015-04193},
      pages        = {135301 -},
      year         = {2014},
      abstract     = {The effect of thermal reduction in ultra-high vacuum was
                      studied in films of tantalum and niobium oxides obtained by
                      oxidation of deposited metallic layers. The obtained films
                      appeared to be amorphous and their stoichiometry was not
                      uniform. For the Ta based film the main component was Ta2O5
                      while for the oxidized Nb film the pentoxide was present in
                      the topmost part of the film and the thickest layer had the
                      electron density assigned to NbO2. Thermal reduction was
                      studied with the use of in situ photoelectron spectroscopy
                      which revealed for the Nb–O film a strong effect for
                      temperature as low as 300 °C. The Nb–O film reduced at
                      600 °C exhibited dominating metallic-like electronic states
                      assigned to NbO. For the Ta–O film the significant
                      reduction process started above 600 °C. At 900 °C the film
                      showed metallic-like states which can be attributed to Ta2O.
                      A single crystal of Nb2O5 showed no effect of reduction for
                      temperatures up to 500 °C. A test performed with the use of
                      local conductivity atomic force microscopy showed the most
                      interesting bipolar-like resistive switching properties for
                      the films reduced at temperatures up to 300 °C.},
      cin          = {PGI-4 / PGI-7},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-4-20110106 / I:(DE-Juel1)PGI-7-20110106},
      pnm          = {421 - Frontiers of charge based Electronics (POF2-421)},
      pid          = {G:(DE-HGF)POF2-421},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000332791200011},
      doi          = {10.1088/0022-3727/47/13/135301},
      url          = {https://juser.fz-juelich.de/record/201903},
}