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@ARTICLE{Schnedler:202123,
      author       = {Schnedler, Michael and Portz, V. and Weidlich, Phillip and
                      Dunin-Borkowski, Rafal and Ebert, Ph.},
      title        = {{Q}uantitative description of photoexcited scanning
                      tunneling spectroscopy and its application to the
                      {G}a{A}s(110) surface},
      journal      = {Physical review / B},
      volume       = {91},
      number       = {23},
      issn         = {1098-0121},
      address      = {College Park, Md.},
      publisher    = {APS},
      reportid     = {FZJ-2015-04412},
      pages        = {235305},
      year         = {2015},
      abstract     = {A quantitative description of photoexcited scanning
                      tunneling spectra is developed and applied to photoexcited
                      spectra measured on p-doped nonpolar GaAs(110) surfaces.
                      Under illumination, the experimental spectra exhibit an
                      increase of the tunnel current at negative sample voltages
                      only. In order to analyze the experimental data
                      quantitatively, the potential and charge-carrier
                      distributions of the photoexcited tip-vacuum-semiconductor
                      system are calculated by solving the Poisson as well as the
                      hole and electron continuity equations by a
                      finite-difference algorithm. On this basis, the different
                      contributions to the tunnel current are calculated using an
                      extension of the model of Feenstra and Stroscio to include
                      the light-excited carrier concentrations. The best fit of
                      the calculated tunnel currents to the experimental data is
                      obtained for a tip-induced band bending, which is limited by
                      the partial occupation of the C3 surface state by
                      light-excited electrons. The tunnel current at negative
                      voltages is then composed of a valence band contribution and
                      a photoinduced tunnel current of excited electrons in the
                      conduction band. The quantitative description of the tunnel
                      current developed here is generally applicable and provides
                      a solid foundation for the quantitative interpretation of
                      photoexcited scanning tunneling spectroscopy.},
      cin          = {PGI-5},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-5-20110106},
      pnm          = {141 - Controlling Electron Charge-Based Phenomena
                      (POF3-141)},
      pid          = {G:(DE-HGF)POF3-141},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000355619600001},
      doi          = {10.1103/PhysRevB.91.235305},
      url          = {https://juser.fz-juelich.de/record/202123},
}