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| 001 | 202123 | ||
| 005 | 20240610120514.0 | ||
| 024 | 7 | _ | |a 10.1103/PhysRevB.91.235305 |2 doi |
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| 024 | 7 | _ | |a 0556-2805 |2 ISSN |
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| 024 | 7 | _ | |a 1098-0121 |2 ISSN |
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| 100 | 1 | _ | |a Schnedler, Michael |0 P:(DE-Juel1)143949 |b 0 |u fzj |
| 245 | _ | _ | |a Quantitative description of photoexcited scanning tunneling spectroscopy and its application to the GaAs(110) surface |
| 260 | _ | _ | |a College Park, Md. |c 2015 |b APS |
| 336 | 7 | _ | |a Journal Article |b journal |m journal |0 PUB:(DE-HGF)16 |s 1439279092_4232 |2 PUB:(DE-HGF) |
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| 520 | _ | _ | |a A quantitative description of photoexcited scanning tunneling spectra is developed and applied to photoexcited spectra measured on p-doped nonpolar GaAs(110) surfaces. Under illumination, the experimental spectra exhibit an increase of the tunnel current at negative sample voltages only. In order to analyze the experimental data quantitatively, the potential and charge-carrier distributions of the photoexcited tip-vacuum-semiconductor system are calculated by solving the Poisson as well as the hole and electron continuity equations by a finite-difference algorithm. On this basis, the different contributions to the tunnel current are calculated using an extension of the model of Feenstra and Stroscio to include the light-excited carrier concentrations. The best fit of the calculated tunnel currents to the experimental data is obtained for a tip-induced band bending, which is limited by the partial occupation of the C3 surface state by light-excited electrons. The tunnel current at negative voltages is then composed of a valence band contribution and a photoinduced tunnel current of excited electrons in the conduction band. The quantitative description of the tunnel current developed here is generally applicable and provides a solid foundation for the quantitative interpretation of photoexcited scanning tunneling spectroscopy. |
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| 542 | _ | _ | |i 2015-06-04 |2 Crossref |u http://link.aps.org/licenses/aps-default-license |
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| 700 | 1 | _ | |a Portz, V. |0 P:(DE-Juel1)145975 |b 1 |
| 700 | 1 | _ | |a Weidlich, Phillip |0 P:(DE-Juel1)139007 |b 2 |
| 700 | 1 | _ | |a Dunin-Borkowski, Rafal |0 P:(DE-Juel1)144121 |b 3 |
| 700 | 1 | _ | |a Ebert, Ph. |0 P:(DE-Juel1)130627 |b 4 |e Corresponding Author |
| 773 | 1 | 8 | |a 10.1103/physrevb.91.235305 |b American Physical Society (APS) |d 2015-06-04 |n 23 |p 235305 |3 journal-article |2 Crossref |t Physical Review B |v 91 |y 2015 |x 1098-0121 |
| 773 | _ | _ | |a 10.1103/PhysRevB.91.235305 |g Vol. 91, no. 23, p. 235305 |0 PERI:(DE-600)2844160-6 |n 23 |p 235305 |t Physical review / B |v 91 |y 2015 |x 1098-0121 |
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| 999 | C | 5 | |a 10.1103/PhysRevLett.64.1051 |9 -- missing cx lookup -- |2 Crossref |
| 999 | C | 5 | |a 10.1103/PhysRevLett.65.456 |9 -- missing cx lookup -- |2 Crossref |
| 999 | C | 5 | |a 10.1016/S0169-4332(97)00480-7 |9 -- missing cx lookup -- |2 Crossref |
| 999 | C | 5 | |a 10.1103/PhysRevB.60.R2165 |9 -- missing cx lookup -- |2 Crossref |
| 999 | C | 5 | |a 10.1063/1.1382869 |9 -- missing cx lookup -- |2 Crossref |
| 999 | C | 5 | |a 10.1103/PhysRevLett.98.026802 |9 -- missing cx lookup -- |2 Crossref |
| 999 | C | 5 | |a 10.1063/1.2888733 |9 -- missing cx lookup -- |2 Crossref |
| 999 | C | 5 | |a 10.1143/JJAP.47.6117 |9 -- missing cx lookup -- |2 Crossref |
| 999 | C | 5 | |a 10.1063/1.3177329 |9 -- missing cx lookup -- |2 Crossref |
| 999 | C | 5 | |a 10.1063/1.1432113 |9 -- missing cx lookup -- |2 Crossref |
| 999 | C | 5 | |a 10.1103/PhysRevLett.70.2471 |9 -- missing cx lookup -- |2 Crossref |
| 999 | C | 5 | |a 10.1063/1.115764 |9 -- missing cx lookup -- |2 Crossref |
| 999 | C | 5 | |a 10.1063/1.118945 |9 -- missing cx lookup -- |2 Crossref |
| 999 | C | 5 | |a 10.1103/PhysRevB.65.195318 |9 -- missing cx lookup -- |2 Crossref |
| 999 | C | 5 | |a 10.1143/JJAP.43.1891 |9 -- missing cx lookup -- |2 Crossref |
| 999 | C | 5 | |a 10.1380/ejssnt.2006.192 |9 -- missing cx lookup -- |2 Crossref |
| 999 | C | 5 | |a 10.1103/PhysRevB.53.8090 |9 -- missing cx lookup -- |2 Crossref |
| 999 | C | 5 | |a 10.1116/1.589571 |9 -- missing cx lookup -- |2 Crossref |
| 999 | C | 5 | |a 10.1103/PhysRevB.82.115331 |9 -- missing cx lookup -- |2 Crossref |
| 999 | C | 5 | |a 10.1116/1.583691 |9 -- missing cx lookup -- |2 Crossref |
| 999 | C | 5 | |a 10.1116/1.1606466 |9 -- missing cx lookup -- |2 Crossref |
| 999 | C | 5 | |a 10.1103/PhysRevB.51.9696 |9 -- missing cx lookup -- |2 Crossref |
| 999 | C | 5 | |a 10.1063/1.1328412 |9 -- missing cx lookup -- |2 Crossref |
| 999 | C | 5 | |a 10.1063/1.1405500 |9 -- missing cx lookup -- |2 Crossref |
| 999 | C | 5 | |a 10.1103/PhysRevLett.84.5816 |9 -- missing cx lookup -- |2 Crossref |
| 999 | C | 5 | |1 Ph. Ebert |y 2012 |2 Crossref |t Nanoelectronics and Information Technology |o Ph. Ebert Nanoelectronics and Information Technology 2012 |
| 999 | C | 5 | |a 10.1088/1464-4258/8/4/S19 |9 -- missing cx lookup -- |2 Crossref |
| 999 | C | 5 | |1 V. Tsukruk |y 2012 |2 Crossref |t Scanning Probe Microscopy of Soft Matter: Fundamentals and Practices |o V. Tsukruk Scanning Probe Microscopy of Soft Matter: Fundamentals and Practices 2012 |
| 999 | C | 5 | |a 10.1103/PhysRevB.67.165327 |9 -- missing cx lookup -- |2 Crossref |
| 999 | C | 5 | |a 10.1016/0039-6028(92)90638-M |9 -- missing cx lookup -- |2 Crossref |
| 999 | C | 5 | |a 10.1103/PhysRevB.59.8043 |9 -- missing cx lookup -- |2 Crossref |
| 999 | C | 5 | |a 10.1209/epl/i1999-00206-0 |9 -- missing cx lookup -- |2 Crossref |
| 999 | C | 5 | |a 10.1103/PhysRevB.80.085316 |9 -- missing cx lookup -- |2 Crossref |
| 999 | C | 5 | |a 10.1063/1.1569419 |9 -- missing cx lookup -- |2 Crossref |
| 999 | C | 5 | |a 10.1103/PhysRevB.84.085210 |9 -- missing cx lookup -- |2 Crossref |
| 999 | C | 5 | |a 10.1063/1.1723358 |9 -- missing cx lookup -- |2 Crossref |
| 999 | C | 5 | |1 S. M. Sze |y 2007 |2 Crossref |t Physics of Semiconductor Devices |o S. M. Sze Physics of Semiconductor Devices 2007 |
| 999 | C | 5 | |a 10.1007/978-3-7091-8752-4 |1 S. Selberherr |2 Crossref |9 -- missing cx lookup -- |y 1984 |
| 999 | C | 5 | |a 10.1088/0957-4484/18/4/044015 |9 -- missing cx lookup -- |2 Crossref |
| 999 | C | 5 | |a 10.1063/1.321330 |9 -- missing cx lookup -- |2 Crossref |
| 999 | C | 5 | |1 R. A. Smith |y 1959 |2 Crossref |t Semiconductors |o R. A. Smith Semiconductors 1959 |
| 999 | C | 5 | |a 10.1016/0039-6028(86)90243-8 |9 -- missing cx lookup -- |2 Crossref |
| 999 | C | 5 | |a 10.1103/PhysRevB.14.556 |9 -- missing cx lookup -- |2 Crossref |
| 999 | C | 5 | |a 10.1103/PhysRevB.30.4828 |9 -- missing cx lookup -- |2 Crossref |
| 999 | C | 5 | |a 10.1103/PhysRevB.80.075320 |9 -- missing cx lookup -- |2 Crossref |
| 999 | C | 5 | |a 10.1016/0038-1098(79)91053-6 |9 -- missing cx lookup -- |2 Crossref |
| 999 | C | 5 | |a 10.1016/0038-1098(79)90056-5 |9 -- missing cx lookup -- |2 Crossref |
| 999 | C | 5 | |a 10.1103/PhysRevB.41.9880 |9 -- missing cx lookup -- |2 Crossref |
| 999 | C | 5 | |a 10.1103/PhysRevLett.77.2997 |9 -- missing cx lookup -- |2 Crossref |
| 999 | C | 5 | |a 10.1103/PhysRevB.58.7799 |9 -- missing cx lookup -- |2 Crossref |
| 999 | C | 5 | |a 10.1016/S1359-0286(00)00046-2 |9 -- missing cx lookup -- |2 Crossref |
| 999 | C | 5 | |a 10.1063/1.353991 |9 -- missing cx lookup -- |2 Crossref |
| 999 | C | 5 | |y 2001 |2 Crossref |t Semiconductors, Group IV Elements, IV-IV and III-V Compounds. Part b - Electronic, Transport, Optical and Other Properties |o Semiconductors, Group IV Elements, IV-IV and III-V Compounds. Part b - Electronic, Transport, Optical and Other Properties 2001 |
| 999 | C | 5 | |a 10.1016/j.susc.2014.07.024 |9 -- missing cx lookup -- |2 Crossref |
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