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@INPROCEEDINGS{Zadorozhnyi:202324,
author = {Zadorozhnyi, Ihor and Pud, Sergii and Patrychuk, M. and
Vitusevich, Svetlana},
title = {{F}eatures of the {G}ate {C}oupling {E}ffect in
{L}iquid-{G}ated {S}i {N}anowire {FET}s},
reportid = {FZJ-2015-04588},
year = {2015},
abstract = {We present results of a comprehensive study of the
liquid-back gate coupling effect in our Si nanowire (NW)
field-effect transistor (FET) structures using noise
spectroscopy in different operation modes, including
variable back-gate voltage. The constant channel resistance
regime was used for measurements of the transport and noise
properties of the liquid-gated Si NW FETs and simulations
using Sentaurus TCAD software to improve our understanding
of the coupling effect phenomena. The concentration profiles
were simulated for different liquid- and back-gate voltages,
which correspond to the experimental working points. The
noise spectra were studied while tuning the position of the
conducting channel in the liquid-gated Si NW FET. Results
demonstrate that the dominant flicker noise mechanism in
such structures is the number fluctuations due to the
localization of the conducting channel near the dielectric
layer of the liquid gate.},
month = {Jun},
date = {2015-06-01},
organization = {The 23rd International Conference on
Noise and Fluctuations, Xi'an (China),
1 Jun 2015 - 5 Jun 2015},
subtyp = {Outreach},
cin = {PGI-8 / JARA-FIT},
cid = {I:(DE-Juel1)PGI-8-20110106 / $I:(DE-82)080009_20140620$},
pnm = {523 - Controlling Configuration-Based Phenomena (POF3-523)},
pid = {G:(DE-HGF)POF3-523},
typ = {PUB:(DE-HGF)24},
url = {https://juser.fz-juelich.de/record/202324},
}