TY  - JOUR
AU  - Knoll, Lars
AU  - Zhao, Qing-Tai
AU  - Nichau, Alexander
AU  - Trellenkamp, Stefan
AU  - Richter, Simon
AU  - Schafer, Anna
AU  - Esseni, David
AU  - Selmi, Luca
AU  - Bourdelle, Konstantin K.
AU  - Mantl, Siegfried
TI  - Inverters With Strained Si Nanowire Complementary Tunnel Field-Effect Transistors
JO  - IEEE electron device letters
VL  - 34
IS  - 6
SN  - 1558-0563
CY  - New York, NY
PB  - IEEE
M1  - FZJ-2015-04626
SP  - 813 - 815
PY  - 2013
AB  - Inverters based on uniaxially tensile strained Si (sSi) nanowire (NW) tunneling field-effect transistors (TFETs) are fabricated. Tilted dopant implantation using the gate as a shadow mask allows self-aligned formation of p-i-n TFETs. The steep junctions formed by dopant segregation at low temperatures improve the band-to-band tunneling, resulting in higher on-currents of n- and p-TFETs of > 10 μA/μm at VDS=0.5 V. The subthreshold slope for n-channel TFETs reaches a minimum value of 30 mV/dec, and is <; 60 mV/dec over one order of magnitude of drain current. The first sSi NW complementary TFET inverters show sharp transitions and fairly high static gain even at very lowVDD=0.2 V. The first transient response analysis of the inverters shows clear output voltage overshoots and a fall time of 2 ns at VDD=1.0 V.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000319460800032
DO  - DOI:10.1109/LED.2013.2258652
UR  - https://juser.fz-juelich.de/record/202365
ER  -