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@ARTICLE{Knoll:202365,
      author       = {Knoll, Lars and Zhao, Qing-Tai and Nichau, Alexander and
                      Trellenkamp, Stefan and Richter, Simon and Schafer, Anna and
                      Esseni, David and Selmi, Luca and Bourdelle, Konstantin K.
                      and Mantl, Siegfried},
      title        = {{I}nverters {W}ith {S}trained {S}i {N}anowire
                      {C}omplementary {T}unnel {F}ield-{E}ffect {T}ransistors},
      journal      = {IEEE electron device letters},
      volume       = {34},
      number       = {6},
      issn         = {1558-0563},
      address      = {New York, NY},
      publisher    = {IEEE},
      reportid     = {FZJ-2015-04626},
      pages        = {813 - 815},
      year         = {2013},
      abstract     = {Inverters based on uniaxially tensile strained Si (sSi)
                      nanowire (NW) tunneling field-effect transistors (TFETs) are
                      fabricated. Tilted dopant implantation using the gate as a
                      shadow mask allows self-aligned formation of p-i-n TFETs.
                      The steep junctions formed by dopant segregation at low
                      temperatures improve the band-to-band tunneling, resulting
                      in higher on-currents of n- and p-TFETs of > 10 μA/μm at
                      VDS=0.5 V. The subthreshold slope for n-channel TFETs
                      reaches a minimum value of 30 mV/dec, and is <; 60 mV/dec
                      over one order of magnitude of drain current. The first sSi
                      NW complementary TFET inverters show sharp transitions and
                      fairly high static gain even at very lowVDD=0.2 V. The first
                      transient response analysis of the inverters shows clear
                      output voltage overshoots and a fall time of 2 ns at VDD=1.0
                      V.},
      cin          = {PGI-8-PT / PGI-9},
      ddc          = {620},
      cid          = {I:(DE-Juel1)PGI-8-PT-20110228 / I:(DE-Juel1)PGI-9-20110106},
      pnm          = {423 - Sensorics and bioinspired systems (POF2-423)},
      pid          = {G:(DE-HGF)POF2-423},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000319460800032},
      doi          = {10.1109/LED.2013.2258652},
      url          = {https://juser.fz-juelich.de/record/202365},
}