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@PHDTHESIS{Weng:202769,
      author       = {Weng, Robert},
      title        = {{S}tudy on the electroforming and resistive switching
                      behaviour of nickel oxide thin films for non-volatile memory
                      applications},
      volume       = {109},
      school       = {RWTH Aachen},
      type         = {Dr.},
      address      = {Jülich},
      publisher    = {Forschungszentrum Jülich GmbH Zentralbibliothek, Verlag},
      reportid     = {FZJ-2015-04951},
      isbn         = {978-3-95806-062-3},
      series       = {Schriften des Forschungszentrums Jülich. Reihe
                      Schlüsseltechnologien / Key Technologies},
      pages        = {XXI, 159 S.},
      year         = {2015},
      note         = {RWTH Aachen, Diss., 2015},
      abstract     = {Over the past decade, the resistance switching effect has
                      drawn attention within the scientific community as a
                      potential candidate for non-volatile random access memories
                      (RAM) and crossbar logic concepts. The resistance switching
                      memory cells are based on (at least) two well-defined
                      non-volatile resistance states, e.g., high resistance state
                      (HRS) and low resistance state (LRS), that define two (or
                      more) logic memory states, e.g., 1 or 0. Often these cells
                      have a simple capacitor structure and are therefore easy to
                      fabricate. However, the market launch of RRAMs is hindered
                      by several serious obstacles. For example, the underlying
                      microscopical physical and chemical switching mechanism of
                      RRAM devices is still under debate although various models
                      have been proposed to explain the observed phenomena. By
                      missing a deep understanding of the resistive switching
                      effect on an atomistic scale, a reliable fabrication of
                      predictable and well performing Gbit memory seems to be
                      questionable. This thesis is an attempt to develop and
                      physically understand the nickel oxide (NiO) based resistive
                      switching non-volatile memory devices. Although the
                      underlying microscopical switching mechanism is still under
                      debate, the macroscopic switching mechanism of this material
                      system is often described by the creation and rupture of
                      well-conducting nickel flaments embedded within an
                      insulating NiO matrix, the so called fuse-antifuse
                      mechanism. The resistive switching characteristics,
                      essentials for future non-volatile memories, such as low
                      voltage and current operation with high resistance ratio
                      between HRS and LRS, fast switching speed, high retention
                      and endurance are presented. Additionally, the emphasis is
                      layed on the understanding of the so called forming process.
                      It describes the first resistance transition of the
                      resistive switching device in which the proposed nickel
                      flament is formed. Therefore, it is the key process for
                      understanding the resistive switching phenomena. The
                      statistical distribution of the observed forming process is
                      studied under accelerated constant voltage stress conditions
                      and at varying temperatures within the framework of the
                      Weibull statistics. To understand the physical and chemical
                      nature of the flamentary structure, the influence of
                      different ambient atmospheres and temperatures on the
                      forming process is analyzed electrically as well as
                      chemically by XPS analysis. Combining these results with the
                      results of the potentiostatic breakdown studies, a model for
                      the forming process in Pt/NiO/Pt non-volatile resistive
                      switching memory devices is proposed.},
      cin          = {PGI-7},
      cid          = {I:(DE-Juel1)PGI-7-20110106},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)11 / PUB:(DE-HGF)3},
      url          = {https://juser.fz-juelich.de/record/202769},
}