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000202953 1001_ $$0P:(DE-Juel1)161530$$aSchulte-Braucks, C.$$b0$$eCorresponding author
000202953 245__ $$aNegative differential resistance in direct bandgap GeSn p-i-n structures
000202953 260__ $$aMelville, NY$$bAmerican Inst. of Physics$$c2015
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000202953 520__ $$aCertain GeSn alloys are group IV direct bandgap semiconductors with prospects for electrical and optoelectronical applications. In this letter, we report on the temperature dependence of the electrical characteristics of high Sn-content Ge0.89Sn0.11 p-i-n diodes. NiGeSn contacts were used to minimize the access resistance and ensure compatibility with silicon technology. The major emphasis is placed on the negative differential resistance in which peak to valley current ratios up to 2.3 were obtained. TCAD simulations were performed to identify the origin of the various current contributions, providing evidence for direct band to band tunneling and trap assisted tunneling.
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000202953 7001_ $$0P:(DE-Juel1)161180$$aStange, D.$$b1
000202953 7001_ $$0P:(DE-Juel1)161247$$avon den Driesch, N.$$b2
000202953 7001_ $$0P:(DE-Juel1)145410$$aBlaeser, S.$$b3
000202953 7001_ $$0P:(DE-HGF)0$$aIkonic, Z.$$b4
000202953 7001_ $$0P:(DE-HGF)0$$aHartmann, J. M.$$b5
000202953 7001_ $$0P:(DE-Juel1)128609$$aMantl, S.$$b6
000202953 7001_ $$0P:(DE-Juel1)125569$$aBuca, D.$$b7
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