%0 Journal Article
%A Gunkel, F.
%A Brinks, P.
%A Hoffmann-Eifert, S.
%A Dittmann, R.
%A Huijben, M.
%A Kleibeuker, J. E.
%A Koster, G.
%A Rijnders, G.
%A Waser, R.
%T Influence of charge compensation mechanisms on the sheet electron density at conducting LaAlO3/SrTiO3-interfaces
%J Applied physics letters
%V 100
%@ 0003-6951
%C Melville, NY
%I American Institute of Physics
%M PreJuSER-20312
%P 052103
%D 2012
%Z Record converted from VDB: 12.11.2012
%X The equilibrium conductance of LaAlO3/SrTiO3 (LAO/STO)-heterointerfaces was investigated at high temperatures (950 K-1100 K) as a function of ambient oxygen partial pressure (pO(2)). Metallic LAO/STO-interfaces were obtained for LAO grown on STO single crystals as well as on STO-buffered (La,Sr)(Al,Ta)O-3 substrates. For both structures, the high temperature sheet carrier density n(S) of the LAO/STO-interface saturates at a value of about 1 x 10(14) cm(-2) for reducing conditions, which indicates the presence of interfacial donor states. A significant decrease of nS is observed at high oxygen partial pressures. According to the defect chemistry model of donor-doped STO, this behavior for oxidizing conditions can be attributed to the formation of Sr-vacancies as charge compensating defects. (C) 2012 American Institute of Physics. [doi:10.1063/1.3679139]
%K J (WoSType)
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000300065300027
%R 10.1063/1.3679139
%U https://juser.fz-juelich.de/record/20312