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000020312 1001_ $$0P:(DE-Juel1)130677$$aGunkel, F.$$b0$$uFZJ
000020312 245__ $$aInfluence of charge compensation mechanisms on the sheet electron density at conducting LaAlO3/SrTiO3-interfaces
000020312 260__ $$aMelville, NY$$bAmerican Institute of Physics$$c2012
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000020312 520__ $$aThe equilibrium conductance of LaAlO3/SrTiO3 (LAO/STO)-heterointerfaces was investigated at high temperatures (950 K-1100 K) as a function of ambient oxygen partial pressure (pO(2)). Metallic LAO/STO-interfaces were obtained for LAO grown on STO single crystals as well as on STO-buffered (La,Sr)(Al,Ta)O-3 substrates. For both structures, the high temperature sheet carrier density n(S) of the LAO/STO-interface saturates at a value of about 1 x 10(14) cm(-2) for reducing conditions, which indicates the presence of interfacial donor states. A significant decrease of nS is observed at high oxygen partial pressures. According to the defect chemistry model of donor-doped STO, this behavior for oxidizing conditions can be attributed to the formation of Sr-vacancies as charge compensating defects. (C) 2012 American Institute of Physics. [doi:10.1063/1.3679139]
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000020312 7001_ $$0P:(DE-HGF)0$$aBrinks, P.$$b1
000020312 7001_ $$0P:(DE-HGF)0$$aHoffmann-Eifert, S.$$b2
000020312 7001_ $$0P:(DE-Juel1)VDB5464$$aDittmann, R.$$b3$$uFZJ
000020312 7001_ $$0P:(DE-HGF)0$$aHuijben, M.$$b4
000020312 7001_ $$0P:(DE-HGF)0$$aKleibeuker, J. E.$$b5
000020312 7001_ $$0P:(DE-HGF)0$$aKoster, G.$$b6
000020312 7001_ $$0P:(DE-HGF)0$$aRijnders, G.$$b7
000020312 7001_ $$0P:(DE-Juel1)131022$$aWaser, R.$$b8$$uFZJ
000020312 773__ $$0PERI:(DE-600)1469436-0$$a10.1063/1.3679139$$gVol. 100, p. 052103$$p052103$$q100<052103$$tApplied physics letters$$v100$$x0003-6951$$y2012
000020312 8567_ $$uhttp://dx.doi.org/10.1063/1.3679139
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