TY  - JOUR
AU  - Gunkel, F.
AU  - Brinks, P.
AU  - Hoffmann-Eifert, S.
AU  - Dittmann, R.
AU  - Huijben, M.
AU  - Kleibeuker, J. E.
AU  - Koster, G.
AU  - Rijnders, G.
AU  - Waser, R.
TI  - Influence of charge compensation mechanisms on the sheet electron density at conducting LaAlO3/SrTiO3-interfaces
JO  - Applied physics letters
VL  - 100
SN  - 0003-6951
CY  - Melville, NY
PB  - American Institute of Physics
M1  - PreJuSER-20312
SP  - 052103
PY  - 2012
N1  - Record converted from VDB: 12.11.2012
AB  - The equilibrium conductance of LaAlO3/SrTiO3 (LAO/STO)-heterointerfaces was investigated at high temperatures (950 K-1100 K) as a function of ambient oxygen partial pressure (pO(2)). Metallic LAO/STO-interfaces were obtained for LAO grown on STO single crystals as well as on STO-buffered (La,Sr)(Al,Ta)O-3 substrates. For both structures, the high temperature sheet carrier density n(S) of the LAO/STO-interface saturates at a value of about 1 x 10(14) cm(-2) for reducing conditions, which indicates the presence of interfacial donor states. A significant decrease of nS is observed at high oxygen partial pressures. According to the defect chemistry model of donor-doped STO, this behavior for oxidizing conditions can be attributed to the formation of Sr-vacancies as charge compensating defects. (C) 2012 American Institute of Physics. [doi:10.1063/1.3679139]
KW  - J (WoSType)
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000300065300027
DO  - DOI:10.1063/1.3679139
UR  - https://juser.fz-juelich.de/record/20312
ER  -