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@ARTICLE{Gunkel:20312,
      author       = {Gunkel, F. and Brinks, P. and Hoffmann-Eifert, S. and
                      Dittmann, R. and Huijben, M. and Kleibeuker, J. E. and
                      Koster, G. and Rijnders, G. and Waser, R.},
      title        = {{I}nfluence of charge compensation mechanisms on the sheet
                      electron density at conducting
                      {L}a{A}l{O}3/{S}r{T}i{O}3-interfaces},
      journal      = {Applied physics letters},
      volume       = {100},
      issn         = {0003-6951},
      address      = {Melville, NY},
      publisher    = {American Institute of Physics},
      reportid     = {PreJuSER-20312},
      pages        = {052103},
      year         = {2012},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {The equilibrium conductance of LaAlO3/SrTiO3
                      (LAO/STO)-heterointerfaces was investigated at high
                      temperatures (950 K-1100 K) as a function of ambient oxygen
                      partial pressure (pO(2)). Metallic LAO/STO-interfaces were
                      obtained for LAO grown on STO single crystals as well as on
                      STO-buffered (La,Sr)(Al,Ta)O-3 substrates. For both
                      structures, the high temperature sheet carrier density n(S)
                      of the LAO/STO-interface saturates at a value of about 1 x
                      10(14) cm(-2) for reducing conditions, which indicates the
                      presence of interfacial donor states. A significant decrease
                      of nS is observed at high oxygen partial pressures.
                      According to the defect chemistry model of donor-doped STO,
                      this behavior for oxidizing conditions can be attributed to
                      the formation of Sr-vacancies as charge compensating
                      defects. (C) 2012 American Institute of Physics.
                      [doi:10.1063/1.3679139]},
      keywords     = {J (WoSType)},
      cin          = {PGI-7},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-7-20110106},
      pnm          = {Grundlagen für zukünftige Informationstechnologien},
      pid          = {G:(DE-Juel1)FUEK412},
      shelfmark    = {Physics, Applied},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000300065300027},
      doi          = {10.1063/1.3679139},
      url          = {https://juser.fz-juelich.de/record/20312},
}