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| Hauptseite > Publikationsdatenbank > Influence of charge compensation mechanisms on the sheet electron density at conducting LaAlO3/SrTiO3-interfaces > print |
| Hauptseite > Publikationsdatenbank > Influence of charge compensation mechanisms on the sheet electron density at conducting LaAlO3/SrTiO3-interfaces > print |
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| 005 | 20180208224538.0 | ||
| 024 | 7 | _ | |2 DOI |a 10.1063/1.3679139 |
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| 100 | 1 | _ | |a Gunkel, F. |b 0 |u FZJ |0 P:(DE-Juel1)130677 |
| 245 | _ | _ | |a Influence of charge compensation mechanisms on the sheet electron density at conducting LaAlO3/SrTiO3-interfaces |
| 260 | _ | _ | |a Melville, NY |b American Institute of Physics |c 2012 |
| 300 | _ | _ | |a 052103 |
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| 440 | _ | 0 | |a Applied Physics Letters |x 0003-6951 |0 562 |y 5 |v 100 |
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| 520 | _ | _ | |a The equilibrium conductance of LaAlO3/SrTiO3 (LAO/STO)-heterointerfaces was investigated at high temperatures (950 K-1100 K) as a function of ambient oxygen partial pressure (pO(2)). Metallic LAO/STO-interfaces were obtained for LAO grown on STO single crystals as well as on STO-buffered (La,Sr)(Al,Ta)O-3 substrates. For both structures, the high temperature sheet carrier density n(S) of the LAO/STO-interface saturates at a value of about 1 x 10(14) cm(-2) for reducing conditions, which indicates the presence of interfacial donor states. A significant decrease of nS is observed at high oxygen partial pressures. According to the defect chemistry model of donor-doped STO, this behavior for oxidizing conditions can be attributed to the formation of Sr-vacancies as charge compensating defects. (C) 2012 American Institute of Physics. [doi:10.1063/1.3679139] |
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| 773 | _ | _ | |a 10.1063/1.3679139 |g Vol. 100, p. 052103 |p 052103 |q 100<052103 |0 PERI:(DE-600)1469436-0 |t Applied physics letters |v 100 |y 2012 |x 0003-6951 |
| 856 | 7 | _ | |u http://dx.doi.org/10.1063/1.3679139 |
| 856 | 4 | _ | |u https://juser.fz-juelich.de/record/20312/files/FZJ-20312.pdf |y Published under German "Allianz" Licensing conditions on 2012-01-30. Available in OpenAccess from 2012-01-30 |z Published final document. |
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