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000203124 1001_ $$0P:(DE-HGF)0$$aJeganathan, K.$$b0$$eCorresponding author
000203124 245__ $$aRaman scattering on intrinsic surface electron accumulation of InN nanowires
000203124 260__ $$aMelville, NY$$bAmerican Inst. of Physics$$c2010
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000203124 520__ $$aAn intrinsic property of vertically aligned InN nanowire (NW) ensembles have been investigated by analysis of coupled longitudinal optical (LO) phonon mode using μ-Raman scattering. Spectra were recorded in backscattering geometries in parallel and perpendicular to the axis of the NWs. The width of surface accumulation layer is estimated from the LO phonon peak intensity ratios. The carrier concentration is extracted to be 6.7×1016 cm−3. The pronounced peak at 627.2 cm−1 is related to the interaction of phonons with surface electrons. The surface charge density, Nsc is calculated to be ∼2.55×1013 cm−2 which provides surface accumulation field strength of 5.5 Mv/cm.
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000203124 7001_ $$0P:(DE-HGF)0$$aPurushothaman, V.$$b1
000203124 7001_ $$0P:(DE-HGF)0$$aDebnath, R. K.$$b2
000203124 7001_ $$0P:(DE-HGF)0$$aCalarco, R.$$b3
000203124 7001_ $$0P:(DE-Juel1)128608$$aLuth, H.$$b4$$ufzj
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