TY  - JOUR
AU  - Jeganathan, K.
AU  - Purushothaman, V.
AU  - Debnath, R. K.
AU  - Calarco, R.
AU  - Luth, H.
TI  - Raman scattering on intrinsic surface electron accumulation of InN nanowires
JO  - Applied physics letters
VL  - 97
IS  - 9
SN  - 0003-6951
CY  - Melville, NY
PB  - American Inst. of Physics
M1  - FZJ-2015-05139
SP  - 093104 -
PY  - 2010
AB  - An intrinsic property of vertically aligned InN nanowire (NW) ensembles have been investigated by analysis of coupled longitudinal optical (LO) phonon mode using μ-Raman scattering. Spectra were recorded in backscattering geometries in parallel and perpendicular to the axis of the NWs. The width of surface accumulation layer is estimated from the LO phonon peak intensity ratios. The carrier concentration is extracted to be 6.7×1016 cm−3. The pronounced peak at 627.2 cm−1 is related to the interaction of phonons with surface electrons. The surface charge density, Nsc is calculated to be ∼2.55×1013 cm−2 which provides surface accumulation field strength of 5.5 Mv/cm.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000282187200055
DO  - DOI:10.1063/1.3483758
UR  - https://juser.fz-juelich.de/record/203124
ER  -