TY  - JOUR
AU  - Schäfer-Nolte, E. O.
AU  - Stoica, T.
AU  - Gotschke, T.
AU  - Limbach, F. A.
AU  - Sutter, E.
AU  - Sutter, P.
AU  - Grützmacher, D.
AU  - Calarco, R.
TI  - Enhanced light scattering of the forbidden longitudinal optical phonon mode studied by micro-Raman spectroscopy on single InN nanowires
JO  - Nanotechnology
VL  - 21
IS  - 31
SN  - 1361-6528
CY  - Bristol
PB  - IOP Publ.
M1  - FZJ-2015-05141
SP  - 315702 -
PY  - 2010
AB  - In the literature, there are controversies on the interpretation of the appearance in InN Raman spectra of a strong scattering peak in the energy region of the unscreened longitudinal optical (LO) phonons, although a shift caused by the phonon–plasmon interaction is expected for the high conductance observed in this material. Most measurements on light scattering are performed on ensembles of InN nanowires (NWs). However, it is important to investigate the behavior of individual nanowires and here we report on micro-Raman measurements on single nanowires. When changing the polarization direction of the incident light from parallel to perpendicular to the wire, the expected reduction of the Raman scattering was observed for transversal optical (TO) and E2 phonon scattering modes, while a strong symmetry-forbidden LO mode was observed independently on the laser polarization direction. Single Mg- and Si-doped crystalline InN nanowires were also investigated. Magnesium doping results in a sharpening of the Raman peaks, while silicon doping leads to an asymmetric broadening of the LO peak. The results can be explained based on the influence of the high electron concentration with a strong contribution of the surface accumulation layer and the associated internal electric field.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000279961200019
DO  - DOI:10.1088/0957-4484/21/31/315702
UR  - https://juser.fz-juelich.de/record/203126
ER  -