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@ARTICLE{SchferNolte:203126,
      author       = {Schäfer-Nolte, E. O. and Stoica, T. and Gotschke, T. and
                      Limbach, F. A. and Sutter, E. and Sutter, P. and
                      Grützmacher, D. and Calarco, R.},
      title        = {{E}nhanced light scattering of the forbidden longitudinal
                      optical phonon mode studied by micro-{R}aman spectroscopy on
                      single {I}n{N} nanowires},
      journal      = {Nanotechnology},
      volume       = {21},
      number       = {31},
      issn         = {1361-6528},
      address      = {Bristol},
      publisher    = {IOP Publ.},
      reportid     = {FZJ-2015-05141},
      pages        = {315702 -},
      year         = {2010},
      abstract     = {In the literature, there are controversies on the
                      interpretation of the appearance in InN Raman spectra of a
                      strong scattering peak in the energy region of the
                      unscreened longitudinal optical (LO) phonons, although a
                      shift caused by the phonon–plasmon interaction is expected
                      for the high conductance observed in this material. Most
                      measurements on light scattering are performed on ensembles
                      of InN nanowires (NWs). However, it is important to
                      investigate the behavior of individual nanowires and here we
                      report on micro-Raman measurements on single nanowires. When
                      changing the polarization direction of the incident light
                      from parallel to perpendicular to the wire, the expected
                      reduction of the Raman scattering was observed for
                      transversal optical (TO) and E2 phonon scattering modes,
                      while a strong symmetry-forbidden LO mode was observed
                      independently on the laser polarization direction. Single
                      Mg- and Si-doped crystalline InN nanowires were also
                      investigated. Magnesium doping results in a sharpening of
                      the Raman peaks, while silicon doping leads to an asymmetric
                      broadening of the LO peak. The results can be explained
                      based on the influence of the high electron concentration
                      with a strong contribution of the surface accumulation layer
                      and the associated internal electric field.},
      cin          = {PGI-9 / JARA-FIT},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {899 - ohne Topic (POF3-899)},
      pid          = {G:(DE-HGF)POF3-899},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000279961200019},
      doi          = {10.1088/0957-4484/21/31/315702},
      url          = {https://juser.fz-juelich.de/record/203126},
}