%0 Journal Article
%A Agafonov, Oleksiy B.
%A Dais, Christian
%A Grützmacher, Detlev
%A Haug, Rolf J.
%T Quantum confinement effects in Si/Ge heterostructures with spatially ordered arrays of self-assembled quantum dots
%J Applied physics letters
%V 96
%N 22
%@ 0003-6951
%C Melville, NY
%I American Inst. of Physics
%M FZJ-2015-05142
%P 222107 -
%D 2010
%X Magnetotunneling spectroscopy was employed to probe the confinement in vertical Si/Ge double-barrier resonant tunneling diodes with regularly distributed Gequantum dots. Their current-voltage characteristics reveal a steplike behavior in the vicinity of zero bias, indicating resonant tunneling of heavy-holes via three-dimensionally confined unoccupied hole states in Gequantum dots. Assuming parabolic confinement, we extract the strength of the confinement potential of quantum dots.
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000278404800030
%R 10.1063/1.3442508
%U https://juser.fz-juelich.de/record/203127