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000203129 041__ $$aEnglish
000203129 1001_ $$0P:(DE-Juel1)128637$$aStoica, Toma$$b0$$ufzj
000203129 245__ $$aGaN and InN Nanowires: Growth and Optoelectronic Properties
000203129 260__ $$aBerlin, Heidelberg$$bSpringer Berlin Heidelberg$$c2010
000203129 29510 $$aTrends in Nanophysics /  ; Berlin, Heidelberg : Springer Berlin Heidelberg, 2010, Chapter 4 ; ISSN: 1612-1317=1868-1212 ; ISBN: 978-3-642-12069-5=978-3-642-12070-1 ; doi:10.1007/978-3-642-12070-1
000203129 300__ $$a73 - 96
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000203129 4900_ $$aEngineering Materials
000203129 500__ $$aMissing Journal:  = 1868-1212
000203129 520__ $$aSelf-assembled GaN and InN nanowires (NWs) were synthesized by radio frequency Plasma-Assisted Molecular Beam Epitaxy (PAMBE) without external catalyst. NWs of micrometers length and diameter in the range of 20–200 nm are fabricated using this method under N-rich conditions. Driving mechanisms of the NW nucleation and the growth are discussed. The NWs have been investigated using scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM), atomic force microscopy (AFM), and photoluminescence (PL). Electric and photoelectric measurements on single wire devices have been performed as well. We establish that the dark, Ultraviolet (UV) photo-current and band-edge absorption tails in GaN NWs are strongly dependent on wire diameter. A model of surface Fermi level pinning and Franz-Keldysh effect in carrier depletion region at wire surface were used to explain the observed behaviors. InN NWs show infrared (IR) photoluminescence strongly dependent on the growth parameters. High electron concentration of 1018 – 1019 cm−3 was evaluated from line shape analysis of PL spectra. The Fermi level pinning at the surface corresponds to a surface accumulation layer. To modify the surface of InN NWs, core-shell InN/GaN NWs were grown. In this paper we focus on the influence of surface effects on the growth and properties of GaN and InN nanowires.
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000203129 773__ $$a10.1007/978-3-642-12070-1_4
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