% IMPORTANT: The following is UTF-8 encoded.  This means that in the presence
% of non-ASCII characters, it will not work with BibTeX 0.99 or older.
% Instead, you should use an up-to-date BibTeX implementation like “bibtex8” or
% “biber”.

@INBOOK{Stoica:203129,
      author       = {Stoica, Toma and sutter and Calarco},
      title        = {{G}a{N} and {I}n{N} {N}anowires: {G}rowth and
                      {O}ptoelectronic {P}roperties},
      address      = {Berlin, Heidelberg},
      publisher    = {Springer Berlin Heidelberg},
      reportid     = {FZJ-2015-05144},
      isbn         = {978-3-642-12069-5},
      series       = {Engineering Materials},
      pages        = {73 - 96},
      year         = {2010},
      note         = {Missing Journal: = 1868-1212},
      comment      = {Trends in Nanophysics / ; Berlin, Heidelberg : Springer
                      Berlin Heidelberg, 2010, Chapter 4 ; ISSN:
                      1612-1317=1868-1212 ; ISBN:
                      978-3-642-12069-5=978-3-642-12070-1 ;
                      doi:10.1007/978-3-642-12070-1},
      booktitle     = {Trends in Nanophysics / ; Berlin,
                       Heidelberg : Springer Berlin
                       Heidelberg, 2010, Chapter 4 ; ISSN:
                       1612-1317=1868-1212 ; ISBN:
                       978-3-642-12069-5=978-3-642-12070-1 ;
                       doi:10.1007/978-3-642-12070-1},
      abstract     = {Self-assembled GaN and InN nanowires (NWs) were synthesized
                      by radio frequency Plasma-Assisted Molecular Beam Epitaxy
                      (PAMBE) without external catalyst. NWs of micrometers length
                      and diameter in the range of 20–200 nm are fabricated
                      using this method under N-rich conditions. Driving
                      mechanisms of the NW nucleation and the growth are
                      discussed. The NWs have been investigated using scanning
                      electron microscopy (SEM), high-resolution transmission
                      electron microscopy (HRTEM), atomic force microscopy (AFM),
                      and photoluminescence (PL). Electric and photoelectric
                      measurements on single wire devices have been performed as
                      well. We establish that the dark, Ultraviolet (UV)
                      photo-current and band-edge absorption tails in GaN NWs are
                      strongly dependent on wire diameter. A model of surface
                      Fermi level pinning and Franz-Keldysh effect in carrier
                      depletion region at wire surface were used to explain the
                      observed behaviors. InN NWs show infrared (IR)
                      photoluminescence strongly dependent on the growth
                      parameters. High electron concentration of 1018 – 1019
                      cm−3 was evaluated from line shape analysis of PL spectra.
                      The Fermi level pinning at the surface corresponds to a
                      surface accumulation layer. To modify the surface of InN
                      NWs, core-shell InN/GaN NWs were grown. In this paper we
                      focus on the influence of surface effects on the growth and
                      properties of GaN and InN nanowires.},
      cin          = {PGI-9},
      cid          = {I:(DE-Juel1)PGI-9-20110106},
      pnm          = {899 - ohne Topic (POF3-899)},
      pid          = {G:(DE-HGF)POF3-899},
      typ          = {PUB:(DE-HGF)7},
      UT           = {WOS:000281353400004},
      doi          = {10.1007/978-3-642-12070-1_4},
      url          = {https://juser.fz-juelich.de/record/203129},
}