%0 Journal Article
%A Demarina, Nataliya
%A Grützmacher, Detlev
%T Electrical properties of rolled-up p-type Si/SiGe heterostructures
%J Applied physics letters
%V 98
%N 19
%@ 0003-6951
%C Melville, NY
%I American Inst. of Physics
%M FZJ-2015-05149
%P 192109 -
%D 2011
%X We report a theoretical study of the hole density and the low-field mobility in modulation p-doped rolled-up Si/SiGe heterostructures. Solving coupled Poisson and Schrödinger equations, we show that the total hole density is strongly affected by charged surface states and can reach value of 1011 cm−2 for available doping level at room and low temperature. The simulation of the hole transport along the structure axis based on a Monte Carlo method reveals that the interface roughness scattering is a main mechanism limiting the mobility magnitude, which reaches the value of 104 cm2/V s.
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000290586800032
%R 10.1063/1.3584869
%U https://juser.fz-juelich.de/record/203136