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000203136 1001_ $$0P:(DE-Juel1)125576$$aDemarina, Nataliya$$b0$$eCorresponding author$$ufzj
000203136 245__ $$aElectrical properties of rolled-up p-type Si/SiGe heterostructures
000203136 260__ $$aMelville, NY$$bAmerican Inst. of Physics$$c2011
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000203136 520__ $$aWe report a theoretical study of the hole density and the low-field mobility in modulation p-doped rolled-up Si/SiGe heterostructures. Solving coupled Poisson and Schrödinger equations, we show that the total hole density is strongly affected by charged surface states and can reach value of 1011 cm−2 for available doping level at room and low temperature. The simulation of the hole transport along the structure axis based on a Monte Carlo method reveals that the interface roughness scattering is a main mechanism limiting the mobility magnitude, which reaches the value of 104 cm2/V s.
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000203136 7001_ $$0P:(DE-Juel1)125588$$aGrützmacher, Detlev$$b1$$ufzj
000203136 773__ $$0PERI:(DE-600)1469436-0$$a10.1063/1.3584869$$gVol. 98, no. 19, p. 192109 -$$n19$$p192109 -$$tApplied physics letters$$v98$$x0003-6951$$y2011
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