TY  - JOUR
AU  - Demarina, Nataliya
AU  - Grützmacher, Detlev
TI  - Electrical properties of rolled-up p-type Si/SiGe heterostructures
JO  - Applied physics letters
VL  - 98
IS  - 19
SN  - 0003-6951
CY  - Melville, NY
PB  - American Inst. of Physics
M1  - FZJ-2015-05149
SP  - 192109 -
PY  - 2011
AB  - We report a theoretical study of the hole density and the low-field mobility in modulation p-doped rolled-up Si/SiGe heterostructures. Solving coupled Poisson and Schrödinger equations, we show that the total hole density is strongly affected by charged surface states and can reach value of 1011 cm−2 for available doping level at room and low temperature. The simulation of the hole transport along the structure axis based on a Monte Carlo method reveals that the interface roughness scattering is a main mechanism limiting the mobility magnitude, which reaches the value of 104 cm2/V s.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000290586800032
DO  - DOI:10.1063/1.3584869
UR  - https://juser.fz-juelich.de/record/203136
ER  -