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@ARTICLE{Demarina:203136,
      author       = {Demarina, Nataliya and Grützmacher, Detlev},
      title        = {{E}lectrical properties of rolled-up p-type {S}i/{S}i{G}e
                      heterostructures},
      journal      = {Applied physics letters},
      volume       = {98},
      number       = {19},
      issn         = {0003-6951},
      address      = {Melville, NY},
      publisher    = {American Inst. of Physics},
      reportid     = {FZJ-2015-05149},
      pages        = {192109 -},
      year         = {2011},
      abstract     = {We report a theoretical study of the hole density and the
                      low-field mobility in modulation p-doped rolled-up Si/SiGe
                      heterostructures. Solving coupled Poisson and Schrödinger
                      equations, we show that the total hole density is strongly
                      affected by charged surface states and can reach value of
                      1011 cm−2 for available doping level at room and low
                      temperature. The simulation of the hole transport along the
                      structure axis based on a Monte Carlo method reveals that
                      the interface roughness scattering is a main mechanism
                      limiting the mobility magnitude, which reaches the value of
                      104 cm2/V s.},
      cin          = {PGI-9},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-9-20110106},
      pnm          = {899 - ohne Topic (POF3-899)},
      pid          = {G:(DE-HGF)POF3-899},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000290586800032},
      doi          = {10.1063/1.3584869},
      url          = {https://juser.fz-juelich.de/record/203136},
}