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| 001 | 203136 | ||
| 005 | 20210129220305.0 | ||
| 024 | 7 | _ | |a 10.1063/1.3584869 |2 doi |
| 024 | 7 | _ | |a 0003-6951 |2 ISSN |
| 024 | 7 | _ | |a 1931-9401 |2 ISSN |
| 024 | 7 | _ | |a WOS:000290586800032 |2 WOS |
| 024 | 7 | _ | |a 2128/17317 |2 Handle |
| 037 | _ | _ | |a FZJ-2015-05149 |
| 082 | _ | _ | |a 530 |
| 100 | 1 | _ | |a Demarina, Nataliya |0 P:(DE-Juel1)125576 |b 0 |e Corresponding author |u fzj |
| 245 | _ | _ | |a Electrical properties of rolled-up p-type Si/SiGe heterostructures |
| 260 | _ | _ | |a Melville, NY |c 2011 |b American Inst. of Physics |
| 336 | 7 | _ | |a article |2 DRIVER |
| 336 | 7 | _ | |a Output Types/Journal article |2 DataCite |
| 336 | 7 | _ | |a Journal Article |b journal |m journal |0 PUB:(DE-HGF)16 |s 1438857995_16996 |2 PUB:(DE-HGF) |
| 336 | 7 | _ | |a ARTICLE |2 BibTeX |
| 336 | 7 | _ | |a JOURNAL_ARTICLE |2 ORCID |
| 336 | 7 | _ | |a Journal Article |0 0 |2 EndNote |
| 500 | _ | _ | |3 POF3_Assignment on 2016-02-29 |
| 520 | _ | _ | |a We report a theoretical study of the hole density and the low-field mobility in modulation p-doped rolled-up Si/SiGe heterostructures. Solving coupled Poisson and Schrödinger equations, we show that the total hole density is strongly affected by charged surface states and can reach value of 1011 cm−2 for available doping level at room and low temperature. The simulation of the hole transport along the structure axis based on a Monte Carlo method reveals that the interface roughness scattering is a main mechanism limiting the mobility magnitude, which reaches the value of 104 cm2/V s. |
| 536 | _ | _ | |a 899 - ohne Topic (POF3-899) |0 G:(DE-HGF)POF3-899 |c POF3-899 |f POF III |x 0 |
| 588 | _ | _ | |a Dataset connected to CrossRef |
| 700 | 1 | _ | |a Grützmacher, Detlev |0 P:(DE-Juel1)125588 |b 1 |u fzj |
| 773 | _ | _ | |a 10.1063/1.3584869 |g Vol. 98, no. 19, p. 192109 - |0 PERI:(DE-600)1469436-0 |n 19 |p 192109 - |t Applied physics letters |v 98 |y 2011 |x 0003-6951 |
| 856 | 4 | _ | |u http://scitation.aip.org/content/aip/journal/apl/98/19/10.1063/1.3584869 |
| 856 | 4 | _ | |u https://juser.fz-juelich.de/record/203136/files/1.3584869.pdf |y OpenAccess |
| 856 | 4 | _ | |u https://juser.fz-juelich.de/record/203136/files/1.3584869.gif?subformat=icon |x icon |y OpenAccess |
| 856 | 4 | _ | |u https://juser.fz-juelich.de/record/203136/files/1.3584869.jpg?subformat=icon-1440 |x icon-1440 |y OpenAccess |
| 856 | 4 | _ | |u https://juser.fz-juelich.de/record/203136/files/1.3584869.jpg?subformat=icon-180 |x icon-180 |y OpenAccess |
| 856 | 4 | _ | |u https://juser.fz-juelich.de/record/203136/files/1.3584869.jpg?subformat=icon-640 |x icon-640 |y OpenAccess |
| 856 | 4 | _ | |u https://juser.fz-juelich.de/record/203136/files/1.3584869.pdf?subformat=pdfa |x pdfa |y OpenAccess |
| 909 | C | O | |o oai:juser.fz-juelich.de:203136 |p openaire |p open_access |p VDB |p driver |p dnbdelivery |
| 910 | 1 | _ | |a Forschungszentrum Jülich GmbH |0 I:(DE-588b)5008462-8 |k FZJ |b 0 |6 P:(DE-Juel1)125576 |
| 910 | 1 | _ | |a Forschungszentrum Jülich GmbH |0 I:(DE-588b)5008462-8 |k FZJ |b 1 |6 P:(DE-Juel1)125588 |
| 913 | 2 | _ | |a DE-HGF |b Key Technologies |l Future Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT) |1 G:(DE-HGF)POF3-520 |0 G:(DE-HGF)POF3-529H |2 G:(DE-HGF)POF3-500 |v Addenda |x 0 |
| 913 | 1 | _ | |a DE-HGF |b Programmungebundene Forschung |l ohne Programm |1 G:(DE-HGF)POF3-890 |0 G:(DE-HGF)POF3-899 |2 G:(DE-HGF)POF3-800 |v ohne Topic |x 0 |4 G:(DE-HGF)POF |3 G:(DE-HGF)POF3 |
| 915 | _ | _ | |a DBCoverage |0 StatID:(DE-HGF)0200 |2 StatID |b SCOPUS |
| 915 | _ | _ | |a JCR |0 StatID:(DE-HGF)0100 |2 StatID |b APPL PHYS LETT : 2013 |
| 915 | _ | _ | |a DBCoverage |0 StatID:(DE-HGF)0150 |2 StatID |b Web of Science Core Collection |
| 915 | _ | _ | |a WoS |0 StatID:(DE-HGF)0110 |2 StatID |b Science Citation Index |
| 915 | _ | _ | |a WoS |0 StatID:(DE-HGF)0111 |2 StatID |b Science Citation Index Expanded |
| 915 | _ | _ | |a IF < 5 |0 StatID:(DE-HGF)9900 |2 StatID |
| 915 | _ | _ | |a OpenAccess |0 StatID:(DE-HGF)0510 |2 StatID |
| 915 | _ | _ | |a DBCoverage |0 StatID:(DE-HGF)1150 |2 StatID |b Current Contents - Physical, Chemical and Earth Sciences |
| 915 | _ | _ | |a DBCoverage |0 StatID:(DE-HGF)0300 |2 StatID |b Medline |
| 915 | _ | _ | |a DBCoverage |0 StatID:(DE-HGF)0199 |2 StatID |b Thomson Reuters Master Journal List |
| 920 | _ | _ | |l yes |
| 920 | 1 | _ | |0 I:(DE-Juel1)PGI-9-20110106 |k PGI-9 |l Halbleiter-Nanoelektronik |x 0 |
| 980 | _ | _ | |a journal |
| 980 | _ | _ | |a VDB |
| 980 | _ | _ | |a UNRESTRICTED |
| 980 | _ | _ | |a I:(DE-Juel1)PGI-9-20110106 |
| 980 | 1 | _ | |a FullTexts |
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