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@ARTICLE{Kordo:203145,
      author       = {Kordoš, P. and Mikulics, M. and Stoklas, R. and Čičo, K.
                      and Dadgar, A. and Grűtzmacher, D. and Krost, A.},
      title        = {{T}hermally {O}xidized {I}n{A}l{N} of {D}ifferent
                      {C}ompositions for {I}n{A}l{N}/{G}a{N} {H}eterostructure
                      {F}ield-{E}ffect {T}ransistors},
      journal      = {Journal of electronic materials},
      volume       = {41},
      number       = {11},
      issn         = {1543-186X},
      address      = {Warrendale, Pa},
      publisher    = {TMS},
      reportid     = {FZJ-2015-05154},
      pages        = {3013 - 3016},
      year         = {2012},
      abstract     = {Properties of InAlN/GaN heterostructure field-effect
                      transistors with thermally oxidized (750°C, 2 min) InAlN
                      barrier layers of different compositions (InN = $13\%,$
                      $17\%,$ and $21\%)$ were evaluated. The saturation drain
                      current was inversely proportional to the InN content and
                      was lower than that obtained with nonoxidized devices. From
                      the capacitance measurement, the resulting sheet charge
                      density decreased from 1.1 × 1013 cm−2 to 0.6 × 1013
                      cm−2 with increased InN content, and it was only
                      approximately $50\%$ of that of the nonoxidized
                      counterparts. The oxide thickness of approximately 1 nm was
                      extracted from the zero-bias capacitances. The pulsed
                      measurements yielded a very high gate lag independent from
                      the InAlN composition (the pulsed-to-static drain current
                      ratio was ∼0.5 for a 200-ns pulse width). On the other
                      hand, a significantly lower gate lag was observed on
                      nonoxidized SiN x passivated InAlN/GaN devices. The results
                      demonstrate that a high density of trap states was created
                      in the thermally oxidized InAlN/GaN structures.},
      cin          = {PGI-9},
      ddc          = {670},
      cid          = {I:(DE-Juel1)PGI-9-20110106},
      pnm          = {899 - ohne Topic (POF3-899)},
      pid          = {G:(DE-HGF)POF3-899},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000309677200004},
      doi          = {10.1007/s11664-012-2096-4},
      url          = {https://juser.fz-juelich.de/record/203145},
}