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000203147 1001_ $$0P:(DE-HGF)0$$aYu, W.$$b0
000203147 245__ $$aImpact of Si cap, strain and temperature on the hole mobility of (s)Si/sSiGe/(s)SOI quantum-well p-MOSFETs
000203147 260__ $$a[S.l.] @$$bElsevier$$c2014
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000203147 520__ $$aQuantum-well p-MOSFETs are fabricated on (strained) Si/strained SiGe/(strained) SOI hetero-structure substrates and the effects of Si cap, strain and temperature on hole mobility are investigated. The Si cap layer which behaves as a passivation layer for the SiGe improves the hole mobility by suppressing the scattering due to charges in the high-κ layer and at the high-κ interface. High strain in SiGe enhances the Ge interdiffusion during the thermal process, leading to reduced hole mobilities. The transistors are also characterized at very low temperatures and the scattering mechanism is discussed.
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000203147 7001_ $$0P:(DE-HGF)0$$aZhang, B.$$b1
000203147 7001_ $$0P:(DE-HGF)0$$aLiu, C.$$b2
000203147 7001_ $$0P:(DE-HGF)0$$aZhao, Y.$$b3$$eCorresponding author
000203147 7001_ $$0P:(DE-HGF)0$$aWu, W. R.$$b4
000203147 7001_ $$0P:(DE-HGF)0$$aXue, Z. Y.$$b5
000203147 7001_ $$0P:(DE-HGF)0$$aChen, M.$$b6
000203147 7001_ $$0P:(DE-Juel1)125569$$aBuca, D.$$b7
000203147 7001_ $$0P:(DE-HGF)0$$aHartmann, J.-M.$$b8
000203147 7001_ $$0P:(DE-Juel1)166011$$aWang, X.$$b9
000203147 7001_ $$0P:(DE-Juel1)128649$$aZhao, Q. T.$$b10$$eCorresponding author
000203147 7001_ $$0P:(DE-Juel1)128609$$aMantl, S.$$b11
000203147 773__ $$0PERI:(DE-600)1497065-x$$a10.1016/j.mee.2013.06.015$$gVol. 113, p. 5 - 9$$p5 - 9$$tMicroelectronic engineering$$v113$$x0167-9317$$y2014
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