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@ARTICLE{Yu:203147,
author = {Yu, W. and Zhang, B. and Liu, C. and Zhao, Y. and Wu, W. R.
and Xue, Z. Y. and Chen, M. and Buca, D. and Hartmann, J.-M.
and Wang, X. and Zhao, Q. T. and Mantl, S.},
title = {{I}mpact of {S}i cap, strain and temperature on the hole
mobility of (s){S}i/s{S}i{G}e/(s){SOI} quantum-well
p-{MOSFET}s},
journal = {Microelectronic engineering},
volume = {113},
issn = {0167-9317},
address = {[S.l.] @},
publisher = {Elsevier},
reportid = {FZJ-2015-05156},
pages = {5 - 9},
year = {2014},
abstract = {Quantum-well p-MOSFETs are fabricated on (strained)
Si/strained SiGe/(strained) SOI hetero-structure substrates
and the effects of Si cap, strain and temperature on hole
mobility are investigated. The Si cap layer which behaves as
a passivation layer for the SiGe improves the hole mobility
by suppressing the scattering due to charges in the high-κ
layer and at the high-κ interface. High strain in SiGe
enhances the Ge interdiffusion during the thermal process,
leading to reduced hole mobilities. The transistors are also
characterized at very low temperatures and the scattering
mechanism is discussed.},
cin = {PGI-9 / JARA-FIT},
ddc = {620},
cid = {I:(DE-Juel1)PGI-9-20110106 / $I:(DE-82)080009_20140620$},
pnm = {521 - Controlling Electron Charge-Based Phenomena
(POF3-521)},
pid = {G:(DE-HGF)POF3-521},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000327293500002},
doi = {10.1016/j.mee.2013.06.015},
url = {https://juser.fz-juelich.de/record/203147},
}