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@ARTICLE{Yu:203148,
      author       = {Yu, Wen-Jie and Zhang, Bo and Liu, Chang and Xue,
                      Zhong-Ying and Chen, Ming and Zhao, Qing-Tai},
      title        = {{M}obility {E}nhancement and
                      {G}ate-{I}nduced-{D}rain-{L}eakage {A}nalysis of
                      {S}trained-{S}i{G}e {C}hannel p-{MOSFET}s with {H}igher-κ
                      {L}a{L}u{O} $_{3}$ {G}ate {D}ielectric},
      journal      = {Chinese physics letters},
      volume       = {31},
      number       = {1},
      issn         = {1741-3540},
      address      = {Bristol},
      publisher    = {IOP Publ.},
      reportid     = {FZJ-2015-05157},
      pages        = {016101 -},
      year         = {2014},
      abstract     = {A strained-SiGe p-channel
                      metal-oxide-semiconductor-field-effect transistors
                      (p-MOSFETS) with higher-κ LaLuO3 gate dielectric was
                      fabricated and electrically characterized. The novel
                      higher-κ (κ~30) gate dielectric, LaLuO3, was deposited by
                      molecular-beam deposition and shows good quality for
                      integration into the transistor. The transistor features
                      good output and transfer characteristics. The hole mobility
                      was extracted by the splitting C—V method and a value of
                      200cm2/Vcenterdots was obtained for strong inversion
                      conditions, which indicates that the hole mobility is well
                      enhanced by SiGe channel and that the LaLuO3 layer does not
                      induce additional significant carrier scattering. Gate
                      induced drain leakage is measured and analyzed by using an
                      analytical model. Band-to-band tunneling efficiencies under
                      high and low fields are found to be different, and the
                      tunneling mechanism is discussed.},
      cin          = {PGI-9 / JARA-FIT},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000330208000031},
      doi          = {10.1088/0256-307X/31/1/016101},
      url          = {https://juser.fz-juelich.de/record/203148},
}