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@ARTICLE{Bumer:203201,
      author       = {Bäumer, Christoph and Xu, Chengcheng and Gunkel, Felix and
                      Raab, Nicolas and Heinen, Ronja and Köhl, Annemarie and
                      Dittmann, Regina},
      title        = {{S}urface {T}ermination {C}onversion during
                      {S}r{T}i{O}$_{3}$ {T}hin {F}ilm {G}rowth {R}evealed by
                      {X}-ray {P}hotoelectron {S}pectroscopy},
      journal      = {Scientific reports},
      volume       = {5},
      issn         = {2045-2322},
      address      = {London},
      publisher    = {Nature Publishing Group},
      reportid     = {FZJ-2015-05199},
      pages        = {11829 -},
      year         = {2015},
      abstract     = {Emerging electrical and magnetic properties of oxide
                      interfaces are often dominated by the termination and
                      stoichiometry of substrates and thin films, which depend
                      critically on the growth conditions. Currently, these
                      quantities have to be measured separately with different
                      sophisticated techniques. This report will demonstrate that
                      the analysis of angle dependent X-ray photoelectron
                      intensity ratios provides a unique tool to determine both
                      termination and stoichiometry simultaneously in a
                      straightforward experiment. Fitting the experimental angle
                      dependence with a simple analytical model directly yields
                      both values. The model is calibrated through the
                      determination of the termination of SrTiO3 single crystals
                      after systematic pulsed laser deposition of sub-monolayer
                      thin films of SrO. We then use the model to demonstrate that
                      during homoepitaxial SrTiO3 growth, excess Sr cations are
                      consumed in a self-organized surface termination conversion
                      before cation defects are incorporated into the film. We
                      show that this termination conversion results in insulating
                      properties of interfaces between polar perovskites and
                      SrTiO3 thin films. These insights about oxide thin film
                      growth can be utilized for interface engineering of oxide
                      heterostructures. In particular, they suggest a recipe for
                      obtaining two-dimensional electron gases at thin film
                      interfaces: SrTiO3 should be deposited slightly Ti-rich to
                      conserve the TiO2-termination.},
      cin          = {PGI-7 / JARA-FIT},
      ddc          = {000},
      cid          = {I:(DE-Juel1)PGI-7-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000358169400001},
      doi          = {10.1038/srep11829},
      url          = {https://juser.fz-juelich.de/record/203201},
}