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@ARTICLE{Yu:203219,
      author       = {Yu, Wenjie and Wu, Wangran and Zhang, Bo and Liu, Chang and
                      Sun, Jiabao and Zhai, Dongyuan and Yu, Yuehui and Wang, Xi
                      and Shi, Yi and Zhao, Yi and Zhao, Qing-Tai},
      title        = {{E}xperimental {I}nvestigation on {A}lloy {S}cattering in
                      s{S}i/ ${\rm {S}i}_{0.5}{\rm {G}e}_{0.5}$/s{SOI}
                      {Q}uantum-{W}ell p-{MOSFET}},
      journal      = {IEEE transactions on electron devices},
      volume       = {61},
      number       = {4},
      issn         = {1557-9646},
      address      = {New York, NY},
      publisher    = {IEEE},
      reportid     = {FZJ-2015-05208},
      pages        = {950 - 952},
      year         = {2014},
      abstract     = {Alloy scattering in a sSi/Si0.5Ge0.5/strained Silicon on
                      Insulator (SOI) (sSOI) quantum-well (QW) p-MOSFET is
                      investigated by hole density modulation through applying
                      back-gate biases. The hole mobility under negative back-gate
                      biases is found degraded by intensified alloy scattering at
                      low electrical field because more holes are distributed in
                      the bulk Si0.5Ge0.5. At higher electrical field, the higher
                      density of holes populated at the Si/ Si0.5Ge0.5 interface
                      and less holes in the bulk Si0.5Ge0.5 result in less
                      pronounced alloy scattering, leading to mobility enhancement
                      under negative back-gate biases. This confirms
                      experimentally that alloy scattering does not play a
                      significant role in the hole mobility of sSi/
                      Si0.5Ge0.5/sSOI QW p-MOSFETs under normal operating mode.},
      cin          = {PGI-9 / Neutronenstreuung ; JCNS-1},
      ddc          = {620},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / I:(DE-Juel1)JCNS-1-20110106},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000333464000004},
      doi          = {10.1109/TED.2014.2304723},
      url          = {https://juser.fz-juelich.de/record/203219},
}