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@ARTICLE{Zhang:203322,
      author       = {Zhang, Lei and Zhuang, Hao and Jia, Chun-Lin and Jiang,
                      Xin},
      title        = {{R}ole of catalyst in controlling the growth and morphology
                      of one-dimensional {S}i{C} nanostructures},
      journal      = {CrystEngComm},
      volume       = {17},
      number       = {37},
      issn         = {1466-8033},
      address      = {London},
      publisher    = {RSC},
      reportid     = {FZJ-2015-05289},
      pages        = {7070-7078},
      year         = {2015},
      abstract     = {To control the morphologies of one-dimensional (1D)
                      nanostructures, especially during the catalyst-assisted
                      growth of semiconductor nanostructures, is the key to unlock
                      their potential applications. In this work, we demonstrate
                      that, the morphology of the 1D silicon carbide (SiC)
                      nanostructures can be controlled by manipulating the
                      composition of the catalyst in the microwave plasma chemical
                      vapor deposition process. It is revealed that iron silicide
                      presents as the main catalyst to initiate the growth of 1D
                      SiC nanostructure. High-resolution transmission electron
                      microscopic analysis shows that, the stoichiometry of the
                      iron silicide governs the final morphology of 1D SiC
                      nanowire. For the growth of SiC nanowires, the catalyst is
                      Fe5Si3, while it is Fe3Si for SiC nanoneedles. A special
                      orientation match between the iron silicide catalyst and the
                      SiC nanowire is observed for the first time during the
                      growth of SiC nanostructures. The mechanism for the
                      different morphology of the SiC nanostructures is believed
                      to be the different etching resistivity of the catalyst
                      particles under H2 plasma etching. Based on the above
                      mechanism, a continuous change in the morphology of the SiC
                      nanostructures has been achieved by controlling the supply
                      of Si during growth.},
      cin          = {PGI-5},
      ddc          = {540},
      cid          = {I:(DE-Juel1)PGI-5-20110106},
      pnm          = {143 - Controlling Configuration-Based Phenomena (POF3-143)},
      pid          = {G:(DE-HGF)POF3-143},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000361540700008},
      doi          = {10.1039/C5CE00865D},
      url          = {https://juser.fz-juelich.de/record/203322},
}