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@PHDTHESIS{Schnedler:203365,
      author       = {Schnedler, Michael},
      title        = {{Q}uantitative scanning tunneling spectroscopy of non-polar
                      {III}-{V} compound semiconductor surfaces},
      volume       = {44},
      school       = {RWTH Aachen},
      type         = {Dr.},
      address      = {Jülich},
      publisher    = {Forschungszentrum Jülich GmbH Zentralbibliothek, Verlag},
      reportid     = {FZJ-2015-05318},
      isbn         = {978-3-95806-075-3},
      series       = {Schriften des Forschungszentrums Jülich. Reihe Information
                      / Information},
      pages        = {122 S.},
      year         = {2015},
      note         = {RWTH Aachen, Diss., 2015},
      abstract     = {The investigation of non-polar III-V semiconductor surfaces
                      by cross-section scanning tunneling microscopy and
                      spectroscopy as well as transmission electron microscopy
                      revealed physical surface effects that could have a major
                      impact on novel electrical devices, such as light-emitting
                      diodes, lasers, solar cells, but also high-electron-mobility
                      transistors. Furthermore, photo-excited scanning tunneling
                      spectroscopy was performed on non-polar GaAs(110) surfaces.
                      With this promising technique, surface photo-voltages and
                      local charge carrier distributions can be probed with atomic
                      resolution. The general difficulty in a quantitative
                      analysis of scanning tunneling spectroscopy measurements and
                      hence in the determination of physical properties of the
                      semiconductor surface is the $\textit{tip-induced band
                      bending}$: The electrostatic potential of the tip is not
                      completely screened at the surface of the sample, especially
                      for low-doped materials. Hence, the valence- and conduction
                      band edge of these materials are bent to higher or lower
                      values compared to their values deep within the bulk
                      material. Additionally, one has to take into account the
                      generation and the redistribution of light-excited charge
                      carriers for photo-excited scanning tunneling spectroscopy.
                      Thus, in this thesis, a quantitative description of scanning
                      tunneling spectroscopy with and without light-excited
                      carriers is developed. It is based on a finite difference
                      iteration of the electrostatic potential and the carrier
                      distributions in three dimensions, followed by the
                      calculation of the tunnel current that incorporates
                      light-excited carriers. On the basis of this model, the
                      comparison of measured and calculated scanning tunneling
                      spectra enables the determination of the semiconductor's
                      physical properties. At first, the model was applied to
                      scanning tunneling spectra measured on
                      $\textit{p}$-GaAs(110) surfaces with and without laser
                      excitation. It is proven that the model [...]},
      cin          = {PGI-5},
      cid          = {I:(DE-Juel1)PGI-5-20110106},
      pnm          = {141 - Controlling Electron Charge-Based Phenomena
                      (POF3-141)},
      pid          = {G:(DE-HGF)POF3-141},
      typ          = {PUB:(DE-HGF)11 / PUB:(DE-HGF)3},
      url          = {https://juser.fz-juelich.de/record/203365},
}