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001     203500
005     20240619091145.0
037 _ _ |a FZJ-2015-05421
100 1 _ |a Dai, Yang
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111 2 _ |a DPG-Frühjahrstagung Berlin
|c Berlin
|d 2015-03-15 - 2015-03-20
|w Germany
245 _ _ |a Nonlinear Dielectric Response in Anisotropically Strained Epitaxial Ferroelectric Films
260 _ _ |c 2015
336 7 _ |a Poster
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336 7 _ |a Conference Paper
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336 7 _ |a Output Types/Conference Poster
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336 7 _ |a INPROCEEDINGS
|2 BibTeX
520 _ _ |a Strain can not only strongly modify the electronic characteristics of ferroelectric material, it can also induce interesting partially novel properties in their systems. In this work, the impact of ac and dc electric field and field direction on the dielectric properties of anisotropically strained epitaxial SrTiO3 films grown on DyScO3 are examined. The anisotropic lattice mismatch between the SrTiO3 film and DyScO3 leads to different in-plane tensile strain in the different crystalline direction of 0.95% and 1.05%, respectively. As a result, (i) the tensile strain leads to an increase of the ferroelectric-dielectric phase transition temperature to Tmax=288 K and Tmax=258 K under large and small tensile strain, respectively. (ii) With increasing amplitude of ac electric field, the extrinsic contribution to the dielectric permittivity increases nonlinearly, which indicates the dynamic of domain wall is activated by the ac field. (iii) The dielectric permittivity is strongly suppressed by an additional dc bias electric field for the temperature ranging from 180 K to 320 K. The different dielectric responses are discussed in the term of domain wall dynamic and pinning induced relaxor type model. Keywords: anisotropic strain, thin films, ferroelectrics, domain walls
536 _ _ |a 523 - Controlling Configuration-Based Phenomena (POF3-523)
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700 1 _ |a cai, biya
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700 1 _ |a Schubert, Jürgen
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700 1 _ |a Hollmann, Eugen
|0 P:(DE-Juel1)128687
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700 1 _ |a Wördenweber, Roger
|0 P:(DE-Juel1)128749
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909 C O |o oai:juser.fz-juelich.de:203500
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910 1 _ |a Forschungszentrum Jülich GmbH
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913 1 _ |a DE-HGF
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|v Controlling Configuration-Based Phenomena
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914 1 _ |y 2015
920 _ _ |l no
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