000203506 001__ 203506
000203506 005__ 20210129220407.0
000203506 037__ $$aFZJ-2015-05427
000203506 1001_ $$0P:(DE-Juel1)128749$$aWördenweber, Roger$$b0$$ufzj
000203506 1112_ $$aWorkshop on Oxide Electronics 22$$cParis$$d2015-10-07 - 2015-10-09$$wFrance
000203506 245__ $$aTailoring the Properties of Ferroelectric Films via Compressive and Tensile Strain
000203506 260__ $$c2015
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000203506 3367_ $$033$$2EndNote$$aConference Paper
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000203506 3367_ $$2BibTeX$$aINPROCEEDINGS
000203506 520__ $$aThe impact of anisotropic biaxial strain on the ferroelectric properties of thin oxide films (20-100nm) are examined using the example of epitaxial NaNbO3 and SrTiO3 films that are grown on single-crystalline oxide substrates with different lattice mismatch, leading to  compressive and tensile in-plane strain, respectively. Generally, tensile in-plane strain leads to an increase of the ferroelectric in-plane transition temperature whereas compressive strain tends to decrease the transition temperature. Shifts of the transition temperature by several 100K can easily be obtained via this method leading to room-temperature permittivity of several 1000. Our investigations have shown that the phase transition itself and the ferroelectric states of the anisotropically strained films turn out to be highly complex. First, the transition temperature depends on the direction of the applied electric field which contradicts the concept of an uniform phase transition for a given system. Second, all systems, that we examined, showed relaxor properties which are usually expected for systems consisting of a mixture of phases. Third, most ferroelectric properties strongly depend on the applied electric field. This can partially be explained by Rayleigh law, however especially for the tensile strained SrTiO3 terms of higher order in the field dependence of the permittivity indicate the strong impact of pinning of domain walls and polar regions (e.g. polar nano regions). Finally at elevated temperature an anisotropic conductivity is observed. The latter might attributed to domain wall conductance. The different observations are discussed in terms of existing models, potential application of the different properties will be sketched.
000203506 536__ $$0G:(DE-HGF)POF3-523$$a523 - Controlling Configuration-Based Phenomena (POF3-523)$$cPOF3-523$$fPOF III$$x0
000203506 7001_ $$0P:(DE-HGF)0$$aSchwarzkopf, J$$b1
000203506 7001_ $$0P:(DE-Juel1)156302$$acai, biya$$b2$$ufzj
000203506 7001_ $$0P:(DE-Juel1)161308$$aDai, Yang$$b3$$ufzj
000203506 7001_ $$0P:(DE-HGF)0$$aBraun, D$$b4
000203506 7001_ $$0P:(DE-Juel1)128631$$aSchubert, Jürgen$$b5$$ufzj
000203506 7001_ $$0P:(DE-Juel1)128687$$aHollmann, Eugen$$b6$$ufzj
000203506 909CO $$ooai:juser.fz-juelich.de:203506$$pVDB
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000203506 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)128631$$aForschungszentrum Jülich GmbH$$b5$$kFZJ
000203506 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)128687$$aForschungszentrum Jülich GmbH$$b6$$kFZJ
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000203506 9141_ $$y2015
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